View RC28F320C3_1010241.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Intel(R) Advanced+ Boot Block Flash Memory (C3)
28F800C3, 28F160C3, 28F320C3 (x16)
Datasheet
Product Features

Flexible SmartVoltage Technology -- 2.7 V- 3.6 V read/program/erase -- 12 V for fast production programming 1.65 V to 2.5 V or 2.7 V to 3.6 V I/O Option -- Reduces overall system power High Performance -- 2.7 V- 3.6 V: 70 ns max access time Optimized Architecture for Code Plus Data Storage -- Eight 4 Kword blocks, top or bottom parameter boot -- Up to 127 x 32 Kword blocks -- Fast program suspend capability -- Fast erase suspend capability Flexible Block Locking -- Lock/unlock any block -- Full protection on power-up -- Write Protect (WP#) pin for hardware block protection Low Power Consumption -- 9 mA typical read -- 7 uA typical standby with Automatic Power Savings feature Extended Temperature Operation -- -40 C to +85 C

128-bit Protection Register --64 bit unique device identifier --64 bit user programmable OTP cells Extended Cycling Capability --Minimum 100,000 block erase cycles Software --Supported by Intel's Advanced Flash File Managers -- Intel(R) VFM, Intel(R) FDI, etc. --Code and data storage in the same memory device --Robust Power Loss Recovery for Data Loss Prevention --Common Flash Interface --http://www.intel.com/go/flashsw Standard Surface Mount Packaging --48-Ball BGA*/VFBGA --64-Ball Easy BGA packages --48-TSOP package ETOXTM VIII (0.13 m) Flash Technology --8, 16, 32 Mbit ETOXTM VII (0.18 m) Flash Technology --16, 32 Mbit ETOXTM VI (0.25 m) Flash Technology --8, 16 and 32 Mbit
The Intel(R) Advanced+ Book Block Flash Memory (C3) device, manufactured on Intel's latest 0.13 m and 0.18 m technologies, represents a feature-rich solution for low-power applications. The C3 device incorporates low-voltage capability (3 V read, program, and erase) with high-speed, low-power operation. Flexible block locking allows any block to be independently locked or unlocked. Add to this the Intel(R) Flash Data Integrator (Intel(R) FDI) software and you have a cost-effective, flexible, monolithic code plus data storage solution. Intel(R) Advanced+ Boot Block Flash Memory (C3) products are available in 48-lead TSOP, 48ball CSP, and 64-ball Easy BGA packages. Additional information on this product family can be obtained from the Intel(R) Flash website: http://www.intel.com/design/flash.
Order Number: 290645, Revision: 023 May 2005
INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL(R) PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF INTEL PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Intel products are not intended for use in medical, life saving, life sustaining, critical control or safety systems, or in nuclear facility applications.
Legal Lines and Disclaimers
Intel may make changes to specifications and product descriptions at any time, without notice. Intel Corporation may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the presented subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied, by estoppel or otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights. Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an order number and are referenced in this document, or other Intel literature may be obtained by calling 1-800-548-4725 or by visiting Intel's website at http://www.intel.com. *Other names and brands may be claimed as the property of others. Copyright (c) 2005, Intel Corporation. All Rights Reserved.
May 2005 2
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Contents
1.0 Introduction....................................................................................................................................7 1.1 1.2 2.0 Nomenclature ....................................................................................................................... 7 Conventions .......................................................................................................................... 7
Functional Overview ..................................................................................................................... 8 2.1 2.2 2.3 Product Overview .................................................................................................................8 Block Diagram ......................................................................................................................9 Memory Map ......................................................................................................................... 9
3.0
Package Information ................................................................................................................... 12 3.1 3.2 3.3 mBGA* and VF BGA Package............................................................................................12 TSOP Package ................................................................................................................... 13 Easy BGA Package ............................................................................................................ 14
4.0
Ballout and Signal Descriptions ................................................................................................ 15 4.1 4.2 4.3 48-Lead TSOP Package ..................................................................................................... 15 64-Ball Easy BGA Package ................................................................................................ 18 Signal Descriptions ............................................................................................................. 18
5.0
Maximum Ratings and Operating Conditions........................................................................... 20 5.1 5.2 Absolute Maximum Ratings ................................................................................................ 20 Operating Conditions .......................................................................................................... 20
6.0
Electrical Specifications ............................................................................................................. 22 6.1 6.2 Current Characteristics ....................................................................................................... 22 DC Voltage Characteristics.................................................................................................24
7.0
AC Characteristics ......................................................................................................................25 7.1 7.2 7.3 7.4 7.5 AC Read Characteristics .................................................................................................... 25 AC Write Characteristics..................................................................................................... 29 Erase and Program Timings ............................................................................................... 33 AC I/O Test Conditions ....................................................................................................... 33 Device Capacitance ............................................................................................................ 34
8.0
Power and Reset Specifications ................................................................................................ 35 8.1 8.2 8.3 8.4 8.5 Active Power (Program/Erase/Read).................................................................................. 35 Automatic Power Savings (APS) ........................................................................................ 35 Standby Power ................................................................................................................... 35 Deep Power-Down Mode.................................................................................................... 35 Power and Reset Considerations ....................................................................................... 36 8.5.1 Power-Up/Down Characteristics ............................................................................ 36 8.5.2 RP# Connected to System Reset .......................................................................... 36 8.5.3 VCC, VPP and RP# Transitions ............................................................................ 36 8.5.4 Reset Specifications .............................................................................................. 37 Power Supply Decoupling................................................................................................... 37
8.6 9.0
Device Operations ....................................................................................................................... 39
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 3
Intel(R) Advanced+ Boot Block Flash Memory (C3)
9.1
Bus Operations ................................................................................................................... 39 9.1.1 Read ...................................................................................................................... 39 9.1.2 Write ...................................................................................................................... 39 9.1.3 Output Disable ....................................................................................................... 39 9.1.4 Standby.................................................................................................................. 40 9.1.5 Reset ..................................................................................................................... 40
10.0 Modes of Operation..................................................................................................................... 41 10.1 Read Mode ......................................................................................................................... 41 10.1.1 Read Array............................................................................................................. 41 10.1.2 Read Identifier ....................................................................................................... 41 10.1.3 CFI Query .............................................................................................................. 42 10.1.4 Read Status Register............................................................................................. 42 10.1.4.1 Clear Status Register............................................................................. 43 Program Mode .................................................................................................................... 43 10.2.1 12-Volt Production Programming........................................................................... 43 10.2.2 Suspending and Resuming Program..................................................................... 44 Erase Mode ........................................................................................................................ 44 10.3.1 Suspending and Resuming Erase ......................................................................... 45
10.2
10.3
11.0 Security Modes ............................................................................................................................ 49 Flexible Block Locking ........................................................................................................ 49 11.1.1 Locking Operation.................................................................................................. 50 11.1.1.1 Locked State .......................................................................................... 50 11.1.1.2 Unlocked State....................................................................................... 50 11.1.1.3 Lock-Down State.................................................................................... 50 11.2 Reading Block-Lock Status................................................................................................. 50 11.3 Locking Operations during Erase Suspend ........................................................................ 51 11.4 Status Register Error Checking .......................................................................................... 51 11.5 128-Bit Protection Register................................................................................................. 51 11.5.1 Reading the Protection Register............................................................................ 52 11.5.2 Programming the Protection Register.................................................................... 52 11.5.3 Locking the Protection Register............................................................................. 52 11.6 VPP Program and Erase Voltages ...................................................................................... 52 11.6.1 Program Protection................................................................................................ 53 Write State Machine States......................................................................................................... 54 Flow Charts .................................................................................................................................. 56 Common Flash Interface............................................................................................................. 62 C.1 Query Structure Output....................................................................................................... 62 C.2 Query Structure Overview .................................................................................................. 63 C.3 Block Status Register ......................................................................................................... 64 C.4 CFI Query Identification String............................................................................................ 65 C.5 Device Geometry Definition ................................................................................................ 66 C.6 Intel-Specific Extended Query Table .................................................................................. 68 Additional Information ................................................................................................................ 70 Ordering Information................................................................................................................... 71 11.1
A B C
D E
May 2005 4
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Revision History
Date of Revision 05/12/98 Version -001 Original version 48-Lead TSOP package diagram change BGA package diagrams change 32-Mbit ordering information change (Section 6) CFI Query Structure Output Table Change (Table C2) CFI Primary-Vendor Specific Extended Query Table Change for Optional Features and Command Support change (Table C8) Protection Register Address Change IPPD test conditions clarification (Section 4.3) BGA package top side mark information clarification (Section 6) Byte-Wide Protection Register Address change VIH Specification change (Section 4.3) VIL Maximum Specification change (Section 4.3) ICCS test conditions clarification (Section 4.3) Added Command Sequence Error Note (Table 7) Datasheet renamed from 3 Volt Advanced Boot Block, 8-, 16-, 32-Mbit Flash Memory Family. Added tBHWH /tBHEH and tQVBL (Section 4.6) Programming the Protection Register clarification (Section 3.4.2) Removed all references to x8 configurations Removed reference to 40-Lead TSOP from front page Added Easy BGA package (Section 1.2) Removed 1.8 V I/O references Locking Operations Flowchart changed (Appendix B) Added tWHGL (Section 4.6) CFI Primary Vendor-Specific Extended Query changed (Appendix C) Max ICCD changed to 25 A Table 10, added note indicating VCCMax = 3.3 V for 32-Mbit device Added specifications for 0.18 micron product offerings throughout document Added 64Mbit density Changed references of 32Mbit 80ns devices to 70ns devices to reflect the faster product offering. 10/12/00 -010 Changed VccMax=3.3V reference to indicate that the affected product is the 0.25m 32Mbit device. Minor text edits throughout document. Added 1.8v I/O operation documentation where applicable Added TSOP PCN `Pin-1' indicator information Changed references in 8 x 8 BGA pinout diagrams from `GND' to `Vssq' 7/20/01 -011 Added `Vssq' to Pin Descriptions Information Removed 0.4 m references in DC characteristics table Corrected 64Mb package Ordering Information from 48-uBGA to 48-VFBGA Corrected `bottom' parameter block sizes to on 8Mb device to 8 x 4KWords Minor text edits throughout document 10/02/01 2/05/02 -012 -013 Added specifications for 0.13 micron product offerings throughout document Corrected Iccw / Ippw / Icces /Ippes values. Added mechanicals for 16Mb and 64Mb Minor text edits throughout document. Description
07/21/98
-002
10/03/98
-003
12/04/98 12/31/98 02/24/99
-004 -005 -006
06/10/99
-007
03/20/00 04/24/00
-008 -009
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 5
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Date of Revision
Version Updated 64Mb product offerings. Updated 16Mb product offerings.
Description
4/05/02
-014
Revised and corrected DC Characteristics Table. Added mechanicals for Easy BGA. Minor text edits throughout document.
3/06/03 10/01/03 5/20/04 9/1/04 9/14/04 9/27/04 1/26/05
-016 -017 -018 -019 -020 -021 -022
Complete technical update. Corrected information in the Device Geometry Details table, address 0x34. Updated the layout of the datasheet. Fixed typo for Standby power on cover page. Added lead-free line items to Table 37 "Product Information Ordering Matrix" on page 72. Added specification for 8Mb 0.13 micron device. Added 0.13 micron to Table 37 "Product Information Ordering Matrix" on page 72. Converted datasheet to new template. Deleted Description in Table 4. Deleted Note in Figure 5. Removed all 64M ordering information, removed VF BGA 8M ordering information. Removed 64M reference in title page only. Added software verbiage in title page. Corrected Lead Width (b) measurement in Fig 2., uBGA and VF BGA Package Drawing and Dimensions, page 12.
5/16/05
-023
May 2005 6
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
1.0
Introduction
This datasheet contains the specifications for the Intel(R) Advanced+ Boot Block Flash Memory (C3) device family, hereafter called the C3 flash memory device. These flash memories add features such as instant block locking and protection registers that can be used to enhance the security of systems.
1.1
Nomenclature
0x 0b Byte Word KW or Kword Mword Kb KB Mb MB APS CSP CUI OTP PR PRD PLR RFU SR SRD WSM Hexadecimal prefix Binary prefix 8 bits 16 bits 1024 words 1,048,576 words 1024 bits 1024 bytes 1,048,576 bits 1,048,576 bytes Automatic Power Savings Chip Scale Package Command User Interface One Time Programmable Protection Register Protection Register Data Protection Lock Register Reserved for Future Use Status Register Status Register Data Write State Machine
1.2
Conventions
The terms pin and signal are often used interchangeably to refer to the external signal connections on the package; for chip scale package (CSP) the term ball is used. Group Membership Brackets: Square brackets will be used to designate group membership or to define a group of signals with similar function (i.e. A[21:1], SR[4:1]) Set: When referring to registers, the term set means the bit is a logical 1. Clear: When referring to registers, the term clear means the bit is a logical 0. Block: A group of bits (or words) that erase simultaneously with one block erase instruction. Main Block: A block that contains 32 Kwords. Parameter Block: A block that contains 4 Kwords.
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 7
Intel(R) Advanced+ Boot Block Flash Memory (C3)
2.0
Functional Overview
This section provides an overview of the Intel(R) Advanced+ Boot Block Flash Memory (C3) device features and architecture.
2.1
Product Overview
The C3 flash memory device provides high-performance asynchronous reads in packagecompatible densities with a 16 bit data bus. Individually-erasable memory blocks are optimally sized for code and data storage. Eight 4 Kword parameter blocks are located in the boot block at either the top or bottom of the device's memory map. The rest of the memory array is grouped into 32 Kword main blocks. The device supports read-array mode operations at various I/O voltages (1.8 V and 3 V) and erase and program operations at 3 V or 12 V VPP. With the 3 V I/O option, VCC and VPP can be tied together for a simple, ultra-low-power design. In addition to I/O voltage flexibility, the dedicated VPP input provides complete data protection when VPP VPPLK. The Intel(R) Advanced+ Boot Block Flash Memory (C3) device features a 128-bit protection register enabling security techniques and data protection schemes through a combination of factory-programmed and user-programmable OTP data registers. Zero-latency locking/unlocking on any memory block provides instant and complete protection for critical system code and data. Additional block lock-down capability provides hardware protection where software commands alone cannot change the block's protection status. A command User Interface (CUI) serves as the interface between the system processor and internal operation of the device. A valid command sequence issued to the CUI initiates device automation. An internal Write State Machine (WSM) automatically executes the algorithms and timings necessary for block erase, program, and lock-bit configuration operations. The device offers three low-power saving features: Automatic Power Savings (APS), standby mode, and deep power-down mode. The device automatically enters APS mode following read cycle completion. Standby mode begins when the system deselects the flash memory by deasserting Chip Enable, CE#. The deep power-down mode begins when Reset Deep PowerDown, RP# is asserted, which deselects the memory and places the outputs in a high-impedance state, producing ultra-low power savings. Combined, these three power-savings features significantly enhanced power consumption flexibility.
May 2005 8
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
2.2
Figure 1.
Block Diagram
C3 Flash Memory Device Block Diagram
DQ 0-DQ15
VCCQ Output Buffer Input Buffer
Outp ut M ulti ple xer
Status Register
Da ta Re gi ster
Identifier Register
I/O Logic CE# WE# OE# RP# WP#
Power Reduction Control
Data Comparator
Command User Interface
A[MAX:MIN]
Y-Decoder Input Buffer 4 -KWor d Para mete r B loc k
Y-Gating/Sensing 4 -KWor d Para mete r B loc k 32- KWord M ain Blo ck
Write State Machine 32- KWord M ain Blo ck
Program/Erase Voltage Switch
VPP
Address Latch
X-Decoder
VCC GND
Address Counter
2.3
Memory Map
The Intel(R) Advanced+ Boot Block Flash Memory (C3) device is asymmetrically blocked, which enables system code and data integration within a single flash device. The bulk of the array is divided into 32 Kword main blocks that can store code or data, and 4 Kword boot blocks to facilitate storage of boot code or for frequently changing small parameters. See Table 1, "Top Boot Memory Map" on page 10 and Table 2, "Bottom Boot Memory Map" on page 11 for details.
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 9
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Table 1.
Size (KW) Blk
Top Boot Memory Map
8-Mbit Memory Addressing (Hex) 7F0007FFFF 7E0007EFFF 7D0007DFFF 7C0007CFFF 7B0007BFFF 7A0007AFFF 79000-79FFF 78000-78FFF 70000-77FFF 68000-6FFFF 60000-67FFF 58000-5FFFF ... 10000-17FFF 8000-0FFFF 0000-07FFF Size (KW) Blk 16-Mbit Memory Addressing (Hex) FF000-FFFFF FE000-FEFFF FD000-FDFFF FC000-FCFFF FB000-FBFFF FA000-FAFFF F9000-F9FFF F8000-F8FFF F0000-F7FFF E8000-EFFFF E0000-E7FFF D8000-DFFFF ... 10000-17FFF 08000-0FFFF 00000-07FFF Size (KW) Blk 32-Mbit Memory Addressing (Hex) 1FF0001FFFFF 1FE0001FEFFF 1FD0001FDFFF 1FC0001FCFFF 1FB0001FBFFF 1FA0001FAFFF 1F90001F9FFF 1F80001F8FFF 1F00001F7FFF 1E80001EFFFF 1E00001E7FFF 1D80001DFFFF ... 10000-17FFF 08000-0FFFF 00000-07FFF Size (KW) Blk 64-Mbit Memory Addressing (Hex)
4 4 4 4 4 4 4 4 32 32 32 32 ... 32 32 32
22 21 20 19 18 17 16 15 14 13 12 11 ... 2 1 0
4 4 4 4 4 4 4 4 32 32 32 32 ... 32 32 32
38 37 36 35 34 33 32 31 30 29 28 27 ... 2 1 0
4 4 4 4 4 4 4 4 32 32 32 32 ... 32 32 32
70 69 68 67 66 65 64 63 62 61 60 59 ... 2 1 0
4 4 4 4 4 4 4 4 32 32 32 32 ... 32 32 32
134 133 132 131 130 129 128 127 126 125 124 123 ... 2 1 0
3FF000-3FFFFF 3FE000-3FEFFF 3FD000-3FDFFF 3FC000-3FCFFF 3FB000-3FBFFF 3FA000-3FAFFF 3F9000-3F9FFF 3F8000-3F8FFF 3F0000-3F7FFF 3E8000-3EFFFF 3E0000-3E7FFF 3D8000-3DFFFF ... 10000-17FFF 08000-0FFFF 00000-07FFF
May 2005 10
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Table 2.
Size (KW) 32 32 32 32 ... 32 32 32 4 4 4 4 4 4 4 4 Blk
Bottom Boot Memory Map
8-Mbit Memory Addressing (Hex) 78000-7FFFF 70000-77FFF 68000-6FFFF 60000-67FFF ... 18000-1FFFF 10000-17FFF 08000-0FFFF 07000-07FFF 06000-06FFF 05000-05FFF 04000-04FFF 03000-03FFF 02000-02FFF 01000-01FFF 00000-00FFF Size (KW) 32 32 32 32 ... 32 32 32 4 4 4 4 4 4 4 4 Blk 16-Mbit Memory Addressing (Hex) F8000-FFFFF F0000-F7FFF E8000-EFFFF E0000-E7FFF ... 18000-1FFFF 10000-17FFF 08000-0FFFF 07000-07FFF 06000-06FFF 05000-05FFF 04000-04FFF 03000-03FFF 02000-02FFF 01000-01FFF 00000-00FFF Size (KW) 32 32 32 32 ... 32 32 32 4 4 4 4 4 4 4 4 Blk 32-Mbit Memory Addressing (Hex) 1F8000-1FFFFF 1F0000-1F7FFF 1E8000-1EFFFF 1E0000-1E7FFF ... 18000-1FFFF 10000-17FFF 08000-0FFFF 07000-07FFF 06000-06FFF 05000-05FFF 04000-04FFF 03000-03FFF 02000-02FFF 01000-01FFF 00000-00FFF Size (KW) 32 32 32 32 . 32 32 32 4 4 4 4 4 4 4 4 Blk 64-Mbit Memory Addressing (Hex) 3F8000-3FFFFF 3F0000-3F7FFF 3E8000-3EFFFF 3E0000-3E7FFF ... 18000-1FFFF 10000-17FFF 08000-0FFFF 07000-07FFF 06000-06FFF 05000-05FFF 04000-04FFF 03000-03FFF 02000-02FFF 01000-01FFF 00000-00FFF
22 21 20 19 ... 10 9 8 7 6 5 4 3 2 1 0
38 37 36 35 ... 10 9 8 7 6 5 4 3 2 1 0
70 69 68 67 ... 10 9 8 7 6 5 4 3 2 1 0
134 133 132 131 ... 10 9 8 7 6 5 4 3 2 1 0
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 11
Intel(R) Advanced+ Boot Block Flash Memory (C3)
3.0
3.1
Figure 2.
Package Information
BGA* and VF BGA Package
BGA* and VF BGA Package Drawing and Dimensions
C3 Discrete 8/16/32/64M, .25,.18, .13u ubga/VFBGA R0
Ball A1 Corner
D
S1
Ball A1 Corner
1
A B
2
3
4
5
6
7
8
A B C D E F
8
7
6
5
4
3
21
S2
E
C D E F
e
b
Top View - Bump Side down
Bottom View -Bump side up
A 1 A2 A Seating Plan
Y
Note: Drawing not to scale
Side View
Dimensions Symbol Package Height A Ball Height A1 Package Body Thickness A2 Ball (Lead) Width b Package Body Length 8M (.25) D Package Body Length 16M (.25/.18/.13) 32M (.25/.18/.13) D Package Body Length 64M (.18) D Package Body Width 8M (.25) E Package Body Width 16M (.25/.18/.13) 32M (.18/.13) E Package Body Width 32M (.25) E Package Body Width 64M (.18) E Pitch e Ball (Lead) Count 8M, 16M N Ball (Lead) Count 32M N Ball (Lead) Count 64M N Seating Plane Coplanarity Y Corner to Ball A1 Distance Along D 8M (.25) S1 Corner to Ball A1 Distance Along D 16M (.25/.18/.13) 32M (.18/.13) S1 Corner to Ball A1 Distance Along D 64M (.18) S1 Corner to Ball A1 Distance Along E 8M (.25) S2 Corner to Ball A1 Distance Along E 16M (.25/.18/.13) 32M (.18/.13) S2 Corner to Ball A1 Distance Along E 32M (.25) S2 Corner to Ball A1 Distance Along E 64M (.18) S2
Min 0.150 0.325 7.810 7.186 7.600 6.400 6.864 10.750 8.900
Millimeters Nom Max 1.000 0.665 0.375 7.910 7.286 7.700 6.500 6.964 10.850 9.000 0.750 46 47 48 1.330 1.018 1.225 1.375 1.607 3.550 2.625
Min 0.0059
Inches Nom
Max 0.0394
0.425 8.010 7.386 7.800 6.600 7.064 10.860 9.100
0.0128 0.2829 0.2992 0.2520 0.2702 0.4232 0.3504
0.0262 0.0148 0.2868 0.3031 0.2559 0.2742 0.4272 0.3543 0.0295 46 47 48 0.0524 0.0401 0.0482 0.0541 0.0633 0.1398 0.1033
0.0167 0.2908 0.3071 0.2598 0.2781 0.4276 0.3583
1.230 0.918 1.125 1.275 1.507 3.450 2.525
0.100 1.430 1.118 1.325 1.475 1.707 3.650 2.725
0.0484 0.0361 0.0443 0.0502 0.0593 0.1358 0.0994
0.0039 0.0563 0.0440 0.0522 0.0581 0.0672 0.1437 0.1073
May 2005 12
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
3.2
Figure 3.
TSOP Package
TSOP Package Drawing and Dimensions
Z
See Notes 1, 2, 3 and 4
Pin 1
A2
e E See Detail B
Y
D1 D
A1 Seating Plane
See Det ail A
A
Det ail A Detail B
C
b L
0
A5568- 02
Dimensions
Family: Thin Small Out -Line Package Symbol Min Package Height Standoff Package Body Thickness Lead Width Lead Thickness Plastic Body Length Package Body Width Lead Pitch Terminal Dimension Lead Tip Length Lead Count Lead Tip Angle Seating Plane Coplanarity Lead to Package Offset A A1 A2 b c D1 E e D L N O Y Z 0.150 0.250 0 0.050 0.950 0.150 0.100 1.000 0.200 0.150 1.050 0.300 0.200 Millimeters Nom Max 1.200 0.002 0.037 0.006 0.004 0.717 0.465 0.039 0.008 0.006 0.724 0.472 0.0197 0.780 0.020 0.787 0.024 48 5 0.100 0.350 0.006 0.010 0 3 5 0.004 0.014 0.795 0.028 0.041 0.012 0.008 0.732 0.480 Notes Min Inches Nom Max 0.047 Notes
18.200 18.400 18.600 11.800 12.000 12.200 0.500 19.800 20.000 20.200 0.500 0.600 48 3 0.700
Notes: 1. One dimple on package denotes Pin 1. 2. If two dimples, then the larger dimple denotes Pin 1. 3. Pin 1 will always be in the upper left corner of the package, in reference to the product mark.
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 13
Intel(R) Advanced+ Boot Block Flash Memory (C3)
3.3
Figure 4.
Easy BGA Package
Easy BGA Package Drawing and Dimension
Ball A1 Corner Ball A1 Corner
D
S1
1 A B C D E E F G H
2
3
4
5
6
7
8 A B C D E F G
8
7
6
5
4
3
2
1
S2
b
e H
Top View - Ball side down
Bottom View - Ball Side Up
A1 A2 A
Seating Plane
Y
Note: Drawing not to scale
Side View
Dimensions Table
Package Height Ball Height Package Body Thickness Ball (Lead) Width Package Body Width Package Body Length Pitch Ball (Lead) Count Seating Plane Coplanarity Corner to Ball A1 Distance Along D Corner to Ball A1 Distance Along E Symbol A A1 A2 b D E [e] N Y S1 S2 Millimeters Min Nom 0.250 0.330 9.900 12.900 0.780 0.430 10.000 13.000 1.000 64 1.500 3.000 0.530 10.100 13.100 Max 1.200 Notes Inches Min 0.0098 0.0130 0.3898 0.5079 0.0307 0.0169 0.3937 0.5118 0.0394 64 0.0591 0.1181 0.0209 0.3976 0.5157 Nom Max 0.0472
1 1
1.400 2.900
0.100 1.600 3.100
1 1
0.0551 0.1142
0.0039 0.0630 0.1220
Note: (1) Package dimensions are for reference only. These dimensions are estimates based on die size, and are subject to change.
May 2005 14
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
4.0
Ballout and Signal Descriptions
The C3 device is available in 48-lead TSOP, 48-ball VF BGA, 48-ball BGA, and Easy BGA packages. See Figure 5 on page 15, Figure 7 on page 17, and Figure 8 on page 18, respectively.
4.1
Figure 5.
48-Lead TSOP Package
48-Lead TSOP Package
A 15 A 14 A 13 A 12 A 11 A 10 A9 A8 A 21 A 20 WE# RP# V PP WP# A 19 A 18 A 17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A 16 V CCQ GND DQ 15 DQ 7 DQ 14 DQ 6 DQ 13 DQ 5 DQ 12 DQ 4 V CC DQ 11 DQ 3 DQ 10 DQ 2 DQ 9 DQ 1 DQ 8 DQ 0 OE# GND CE# A0
64 M 32 M
Advanced+ Boot Block 48-Lead TSOP 12 mm x 20 mm TOP VIEW
16 M
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 15
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Figure 6.
Mark for Pin-1 Indicator on 48-Lead 8-Mb, 16-Mb and 32-Mb TSOP
Current M ark:
New M ark:
Note:
The topside marking on 8 Mb, 16 Mb, and 32 Mb Intel Advanced and Advanced + Boot Block 48L TSOP products will convert to a white ink triangle as a Pin 1 indicator. Products without the white triangle will continue to use a dimple as a Pin 1 indicator. There are no other changes in package size, materials, functionality, customer handling, or manufacturability. Product will continue to meet Intel stringent quality requirements. Products affected are Intel Ordering Codes shown in Table 3. 48-Lead TSOP
Extended 64 Mbit Extended 32 Mbit Extended 16 Mbit Extended
Table 3.
TE28F320C3TD70 TE28F320C3BD70 TE28F320C3TC70 TE28F320C3BC70 TE28F320C3TC90 TE28F320C3BC90 TE28F320C3TA100 TE28F320C3BA100 TE28F320C3TA110 TE28F320C3BA110
TE28F160C3TD70 TE28F160C3BD70 TE28F160C3TC80 TE28F160C3BC80 TE28F160C3TA90 TE28F160C3BA90 TE28F160C3TA110 TE28F160C3BA110
May 2005 16
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
(R)
TE28F800C3TA90 TE28F800C3BA90 TE28F800C3TA110 TE28F800C3BA110
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Figure 7.
48-Ball BGA* and 48-Ball VF BGA Chip Scale Package (Top View, Ball Down)1,2,3
1 2 3 4 5 16M A A13 A11 A8 VPP WP# A19 A7 A4 6 7 8
B
A14
A10
WE# 64M
RP# 32M A21
A18
A17
A5
A2
C
A15
A12
A9
A20
A6
A3
A1
D
A16
D14
D5
D11
D2
D8
CE#
A0
E
VCCQ
D15
D6
D12
D3
D9
D0
GND
F
GND
D7
D13
D4
VCC
D10
D1
OE#
Notes: 1. Shaded connections indicate the upgrade address connections. Intel recommends to not use routing in this area. 2. A19 denotes 16 Mbit; A20 denotes 32 Mbit; A21 denotes 64 Mbit. 3. Unused address balls are not populated.
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 17
Intel(R) Advanced+ Boot Block Flash Memory (C3)
4.2
Figure 8.
1 A A1 B A2 C A3 D A4 E
64-Ball Easy BGA Package
64-Ball Easy BGA Package1,2
2 A6 3 A18 4 VPP 5 6 7 8 A VCC GND A10 A15 B A17 A19(1) RP# DU A20(1) A11 A7 A5 WP# WE# DU A21(1) A12 DU DU DU DU A8 DU A14 C A13 D A9 E DQ8 DQ1 DQ9 DQ DQ DQ6 3 12 F CE# DQ0 DQ DQ11 DQ DQ DU 10 5 14 G A0 H A22(2) OE# VCCQ VCC VSSQ DQ7 VCCQ DU VSSQ DQ2 DQ DQ DQ VSSQ A16 4 13 15 H DU VCCQ D7 VSSQ VCC VCCQ OE# A22(2) DU G A16 VSSQ D15 D13 DQ DQ VSSQ 4 2 A0 DU F DU DU DQ14 DQ5 DQ DQ10 DQ CE# 11 0 DU DU DQ DQ DQ DQ DQ DQ 6 12 3 9 1 8 A9 A8 DU DU DU DU A5 A4 A13 A12 A21(1) DU WE# WP# A7 A3 A14 A11 A20(1) DU RP# A19(1) A17 A2 A15 A10 GND VCC VPP A18 A6 A1 8 7 6 5 4 3 2 1
Top View Ball Side Down
Bottom View - Ball Side Up
Notes: 1.A19 denotes 16 Mbit; A20 denotes 32 Mbit; A21 denotes 64 Mbit. 2. Unused address balls are not populated.
4.3
Table 4.
Symbol
Signal Descriptions
Signal Descriptions
Type Description ADDRESS INPUTS for memory addresses. Address are internally latched during a program or erase cycle.
A[MAX:0]
Input
8 Mbit: AMAX= A18 16 Mbit: AMAX = A19 32 Mbit: AMAX = A20 64 Mbit: AMAX = A21
DATA INPUTS/OUTPUTS: Inputs data and commands during a write cycle; outputs data during read cycles. Inputs commands to the Command User Interface when CE# and WE# are active. Data is internally latched. The data pins float to tri-state when the chip is de-selected or the outputs are disabled. CHIP ENABLE: Active-low input. Activates the internal control logic, input buffers, decoders and sense amplifiers. CE# is active low. CE# high de-selects the memory device and reduces power consumption to standby levels. OUTPUT ENABLE: Active-low input. Enables the device's outputs through the data buffers during a Read operation.
DQ[15:0]
Input/ Output
CE#
Input
OE#
Input
May 2005 18
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Table 4.
Symbol
Signal Descriptions
Type Description RESET/DEEP POWER-DOWN: Active-low input.
RP#
Input
When RP# is at logic low, the device is in reset/deep power-down mode, which drives the outputs to High-Z, resets the Write State Machine, and minimizes current levels (ICCD). When RP# is at logic high, the device is in standard operation. When RP# transitions from logic-low to logic-high, the device resets all blocks to locked and defaults to the read array mode.
WRITE ENABLE: Active-low input. WE# controls writes to the device. Address and data are latched on the rising edge of the WE# pulse. WRITE PROTECT: Active-low input.
WE#
Input
WP#
Input
When WP# is a logic low, the lock-down mechanism is enabled and blocks marked lock-down cannot be unlocked through software. When WP# is logic high, the lock-down mechanism is disabled and blocks previously locked-down are now locked and can be unlocked and locked through software. After WP# goes low, any blocks previously marked lock-down revert to the lock-down state. See Section 11.0, "Security Modes" on page 49 for details on block locking.
PROGRAM/ERASE Power Supply: Operates as an input at logic levels to control complete device protection. Supplies power for accelerated Program and Erase operations in 12 V 5% range. Do not leave this pin floating. Lower VPP VPPLK to protect all contents against Program and Erase commands. Set VPP = VCC for in-system Read, Program and Erase operations. In this configuration, VPP can drop as low as 1.65 V to allow for resistor or diode drop from the system supply. Apply VPP to 12 V 5% for faster program and erase in a production environment. Applying 12 V 5% to VPP can only be done for a maximum of 1000 cycles on the main blocks and 2500 cycles on the boot blocks. VPP can be connected to 12 V for a total of 80 hours maximum. See Section 11.6 for details on VPP voltage configurations. DEVICE CORE Power Supply: Supplies power for device operations. OUTPUT Power Supply: Output-driven source voltage. This ball can be tied directly to VCC if operating within VCC range. Ground: For all internal circuitry. All ground inputs must be connected. Do Not Use: Do not use this ball. This ball must not be connected to any power supplies, signals or other balls,; it must be left floating. No Connect
VPP
Input/ Power
VCC VCCQ GND DU NC
Power Power Power -- --
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 19
Intel(R) Advanced+ Boot Block Flash Memory (C3)
5.0
5.1
Warning:
Maximum Ratings and Operating Conditions
Absolute Maximum Ratings
Stressing the device beyond the "Absolute Maximum Ratings" may cause permanent damage. These ratings are stress ratings only. Operation beyond the "Operating Conditions" is not recommended, and extended exposure beyond the "Operating Conditions" may affect device reliability.
NOTICE: Specifications are subject to change without notice. Verify with your local Intel Sales office that you have the latest datasheet before finalizing a design.
.
Parameter
Maximum Rating
Notes
Extended Operating Temperature During Read During Block Erase and Program Temperature under Bias Storage Temperature Voltage On Any Pin (except VCC and VPP) with Respect to GND VPP Voltage (for Block Erase and Program) with Respect to GND VCC and VCCQ Supply Voltage with Respect to GND Output Short Circuit Current -40 C to +85 C -40 C to +85 C -40 C to +85 C -65 C to +125 C -0.5 V to +3.7 V -0.5 V to +13.5 V -0.2 V to +3.6 V 100 mA 4 1 1,2,3
Notes: 1.Minimum DC voltage is -0.5 V on input/output pins. During transitions, this level may undershoot to -2.0 V for periods <20 ns. Maximum DC voltage on input/output pins is VCC +0.5 V which, during transitions, may overshoot to VCC +2.0 V for periods <20 ns. 2.Maximum DC voltage on VPP may overshoot to +14.0 V for periods <20 ns. 3.VPP Program voltage is normally 1.65 V-3.6 V. Connection to a 11.4 V-12.6 V supply can be done for a maximum of 1000 cycles on the main blocks and 2500 cycles on the parameter blocks during program/erase. VPP may be connected to 12 V for a total of 80 hours maximum. 4.Output shorted for no more than one second. No more than one output shorted at a time.
5.2
Table 5.
Operating Conditions
Temperature and Voltage Operating Conditions
Symbol Parameter Notes Min Max Units
TA VCC1 VCC2 VCCQ1 VCCQ2 VCCQ3 VPP1
Operating Temperature VCC Supply Voltage 1, 2 1, 2 1 I/O Supply Voltage
-40 2.7 3.0 2.7 1.65 1.8
+85 3.6 3.6 3.6 2.5 2.5 3.6
C Volts
Volts
Supply Voltage
1
1.65
Volts
May 2005 20
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Table 5.
Temperature and Voltage Operating Conditions
Symbol Parameter Notes Min Max Units
VPP2 Cycling Block Erase Cycling
1, 3 3
11.4 100,000
12.6
Volts Cycles
Notes: 1.VCC and VCCQ must share the same supply when they are in the VCC1 range. 2.VCCMax = 3.3 V for 0.25m 32-Mbit devices. 3.Applying VPP = 11.4 V-12.6 V during a program/erase can only be done for a maximum of 1000 cycles on the main blocks and 2500 cycles on the parameter blocks. VPP may be connected to 12 V for a total of 80 hours maximum.
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 21
Intel(R) Advanced+ Boot Block Flash Memory (C3)
6.0
6.1
Electrical Specifications
Current Characteristics
Table 6.
DC Current Characteristics (Sheet 1 of 2)
VCC 2.7 V-3.6 V 2.7 V-3.6 V Typ Max 1 2.7 V-2.85 V 1.65 V-2.5 V Typ Max 1 2.7 V-3.3 V 1.8 V-2.5 V Typ Max 1 Unit Test Conditions
Sym
Parameter
VCCQ Note
ILI
Input Load Current
1,2
A
VCC = VCCMax VCCQ = VCCQMax VIN = VCCQ or GND VCC = VCCMax VCCQ = VCCQMax VIN = VCCQ or GND VCC = VCCMax CE# = RP# = VCCQ or during Program/ Erase Suspend WP# = VCCQ or GND
ILO
Output Leakage Current VCC Standby Current for 0.13 and 0.18 Micron Product
1,2
10
10
10
A
1
7
15
20
50
150
250
A
ICCS
VCC Standby Current for 0.25 Micron Product VCC Power-Down Current for 0.13 and 0.18 Micron Product
1
10
25
20
50
150
250
A
1,2
7
15
7
20
7
20
A
ICCD
VCC Power-Down Current for 0.25 Product VCC Read Current for 0.13 and 0.18 Micron Product VCC Read Current for 0.25 Micron Product
1,2
7
25
7
25
7
25
A
VCC = VCCMax VCCQ = VCCQMax VIN = VCCQ or GND RP# = GND 0.2 V
1,2,3
9
18
8
15
9
15
mA
ICCR
1,2,3 1
10 0.2 18
18 5 55 22 45 15
8 0.2 18 10 21 16
15 5 55 30 45 45
9 0.2 18 10 21 16
15 5 55 30 45 45
mA A mA mA mA mA
VCC = VCCMax VCCQ = VCCQMax OE# = VIH, CE# =VIL f = 5 MHz, IOUT=0 mA Inputs = VIL or VIH RP# = GND 0.2 V VPP VCC VPP =VPP1, Program in Progress VPP = VPP2 (12v) Program in Progress VPP = VPP1, Erase in Progress VPP = VPP2 (12v) , Erase in Progress
IPPD
VPP Deep PowerDown Current
ICCW
VCC Program Current
1,4 8 16
ICCE
VCC Erase Current
1,4 8
May 2005 22
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Table 6.
DC Current Characteristics (Sheet 2 of 2)
V CC 2.7 V-3.6 V 2.7 V-3.6 V Typ Max 2.7 V-2.85 V 1.65 V-2.5 V Typ Max 2.7 V-3.3 V 1.8 V-2.5 V Typ Max Unit Test Conditions
Sym
Parameter
VCCQ Note
ICCES/ ICCWS
VCC Erase Suspend Current for 0.13 and 0.18 Micron Product 1,4,5 VCC Erase Suspend Current for 0.25 Micron Product VPP Read Current 1,4
7
15
50
200
50
200
A CE# = VIH, Erase Suspend in Progress
10 2
25
15
50 2 50 0.05 8 0.05 16
200
15
50 2 50 0.05 8 0.05 16
200
15
A A A mA mA mA mA VPP VCC VPP > VCC VPP =VPP1, Program in Progress VPP = VPP2 (12v) Program in Progress VPP = VPP1, Erase in Progress VPP = VPP2 (12v) , Erase in Progress VPP = VPP1, Program or Erase Suspend in Progress VPP = VPP2 (12v) , Program or Erase Suspend in Progress
IPPR
50 0.05
200 0.1 22 0.1 22
200 0.1 22 0.1 45
200 0.1 22 0.1 45
IPPW
VPP Program Current
1,4 8 0.05
IPPE
VPP Erase Current
1,4 8
0.2 IPPES/ IPPWS VCC Erase Suspend Current 1,4 50
5
0.2
5
0.2
5
A
200
50
200
50
200
A
Notes: 1.All currents are in RMS unless otherwise noted. Typical values at nominal VCC, TA = +25 C. 2.The test conditions VCCMax, VCCQMax, VCCMin, and VCCQMin refer to the maximum or minimum VCC or VCCQ voltage listed at the top of each column. VCCMax = 3.3 V for 0.25m 32-Mbit devices. 3.Automatic Power Savings (APS) reduces ICCR to approximately standby levels in static operation (CMOS inputs). 4.Sampled, not 100% tested. 5.ICCES or ICCWS is specified with device de-selected. If device is read while in erase suspend, current draw is sum of ICCES and ICCR. If the device is read while in program suspend, current draw is the sum of ICCWS and ICCR.
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 23
Intel(R) Advanced+ Boot Block Flash Memory (C3)
6.2
Table 7.
DC Voltage Characteristics
DC Voltage Characteristics
VCC 2.7 V-3.6 V 2.7 V-3.6 V Min Max 2.7 V-2.85 V 1.65 V-2.5 V Min Max 2.7 V-3.3 V 1.8 V-2.5 V Min Max Unit Test Conditions
Sym
Parameter
VCCQ Note
VIL VIH VOL
Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage VPP LockOut Voltage VPP during Program / Erase Operations VCC Prog/ Erase Lock Voltage VCCQ Prog/ Erase Lock Voltage 1 1 1,2
-0.4 2.0
VCC * 0.22 V VCCQ +0.3V 0.1
-0.4 VCCQ - 0.4V -0.1
0.4 VCCQ +0.3V 0.1
-0.4 VCCQ - 0.4V -0.1
0.4 VCCQ +0.3V 0.1
V V VCC = VCCMin VCCQ = VCCQMin IOL = 100 A VCC = VCCMin VCCQ = VCCQMin IOH = -100 A Complete Write Protection
-0.1
V
VOH VPPLK VPP1 VPP2
VCCQ -0.1V 1.0 1.65 11.4 3.6 12.6
VCCQ - 0.1V 1.0 1.65 11.4 3.6 12.6
VCCQ - 0.1V 1.0 1.65 11.4 3.6 12.6
V
V V V
VLKO
1.5
1.5
1.5
V
VLKO2
1.2
1.2
1.2
V
Notes: 1. Erase and Program are inhibited when VPP < VPPLK and not guaranteed outside the valid VPP ranges of VPP1 and VPP2. 2.Applying VPP = 11.4 V-12.6 V during program/erase can only be done for a maximum of 1000 cycles on the main blocks and 2500 cycles on the parameter blocks. VPP may be connected to 12 V for a total of 80 hours maximum.
May 2005 24
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
7.0
7.1
Table 8.
AC Characteristics
AC Read Characteristics
Read Operations--8-Mbit Density
Density Product 70 ns 2.7 V - 3.6 V Min (ns) Max (ns) 90 ns 3.0 V - 3.6 V Min (ns) Max (ns) 2.7 V - 3.6 V Min (ns) Max (ns) 8 Mbit 110 ns 3.0 V - 3.6 V Min (ns) Max (ns) 2.7 V - 3.6 V Min (ns) Max (ns)
#
Sym
Parameter
VCC Note
R1 R2 R3 R4 R5 R6 R7 R8 R9
tAVAV tAVQV tELQV tGLQV tPHQV tELQX tGLQX tEHQZ tGHQZ
Read Cycle Time Address to Output Delay CE# to Output Delay OE# to Output Delay RP# to Output Delay CE# to Output in Low Z OE# to Output in Low Z CE# to Output in High Z OE# to Output in High Z Output Hold from Address, CE#, or OE# Change, Whichever Occurs First
3,4 3,4 1,3,4 1,3,4 3,4 2,3,4 2,3,4 2,3,4 2,3,4
70 70 70 20 150 0 0 20 20
80 80 80 30 150 0 0 20 20
90 90 90 30 150 0 0 20 20
100 100 100 30 150 0 0 20 20
110 110 110 30 150 0 0 20 20
R10
tOH
2,3,4
0
0
0
0
0
Notes: 1.OE# may be delayed up to tELQV-tGLQV after the falling edge of CE# without impact on tELQV. 2.Sampled, but not 100% tested. 3.See Figure 9, "Read Operation Waveform" on page 28. 4.See Figure 11, "AC Input/Output Reference Waveform" on page 33 for timing measurements and maximum allowable input slew rate.
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 25
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Table 9.
Read Operations--16-Mbit Density
Density Product 16 Mbit
70 ns 2.7 V-3.6 V Min (ns) Max (ns)
80 ns 2.7 V-3.6 V Min (ns) Max (ns)
90 ns 3.0 V-3.6 V Min (ns) Max (ns) 2.7 V-3.6 V Min (ns) Max (ns)
110 ns 3.0 V-3.6V Min (ns) Max (ns) 2.7 V-3.6V Min (ns) Max (ns)
3,4
Notes
#
Sym
Parameter
VCC
R1 R2 R3 R4 R5 R6 R7 R8 R9
tAVAV tAVQV tELQV tGLQV tPHQV tELQX tGLQX tEHQZ tGHQZ
Read Cycle Time Address to Output Delay CE# to Output Delay OE# to Output Delay RP# to Output Delay CE# to Output in Low Z OE# to Output in Low Z CE# to Output in High Z OE# to Output in High Z Output Hold from Address, CE#, or OE# Change, Whichever Occurs First
70 70 70 20 150 0 0 20 20
80 80 80 20 150 0 0 20 20
80 80 80 30 150 0 0 20 20
90 90 90 30 150 0 0 20 20
100 100 100 30 150 0 0 20 20
110 110 110 30 150 0 0 20 20
3,4 1,3,4 1,3,4 3,4 2,3,4 2,3,4 2,3,4 2,3,4
R10
tOH
0
0
0
0
0
0
2,3,4
Notes: 1.OE# may be delayed up to tELQV-tGLQV after the falling edge of CE# without impact on tELQV. 2.Sampled, but not 100% tested. 3.See Figure 9, "Read Operation Waveform" on page 28. 4. See Figure 11, "AC Input/Output Reference Waveform" on page 33 for timing measurements and maximum allowable input slew rate.
May 2005 26
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Table 10.
Read Operations--32-Mbit Density
Density Product 32 Mbit
70 ns 2.7 V-3.6 V Min (ns) Max (ns)
90 ns 2.7 V-3.6 V Min (ns) Max (ns)
100 ns 3.0 V-3.3 V Min (ns) Max (ns) 2.7 V-3.3 V Min (ns) Max (ns)
110 ns 3.0 V-3.3 V Min (ns) Max (ns) 2.7 V-3.3 V Min (ns) Max (ns)
3,4
Notes
#
Sym
Parameter
VCC
R1 R2 R3 R4 R5 R6 R7 R8 R9
tAVAV tAVQV tELQV tGLQV tPHQV tELQX tGLQX tEHQZ tGHQZ
Read Cycle Time Address to Output Delay CE# to Output Delay OE# to Output Delay RP# to Output Delay CE# to Output in Low Z OE# to Output in Low Z CE# to Output in High Z OE# to Output in High Z Output Hold from Address, CE#, or OE# Change, Whichever Occurs First
70 70 70 20 150 0 0 20 20
90 90 90 20 150 0 0 20 20
90 90 90 30 150 0 0 20 20
100 100 100 30 150 0 0 20 20
100 100 100 30 150 0 0 20 20
110 110 110 30 150 0 0 20 20
3,4 1,3,4 1,3,4 3,4 2,3,4 2,3,4 2,3,4 2,3,4
R10
tOH
0
0
0
0
0
0
2,3,4
Notes: 1.OE# may be delayed up to tELQV-tGLQV after the falling edge of CE# without impact on tELQV. 2.Sampled, but not 100% tested. 3.See Figure 9, "Read Operation Waveform" on page 28. 4. See Figure 11, "AC Input/Output Reference Waveform" on page 33 for timing measurements and maximum allowable input slew rate.
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 27
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Table 11.
Read Operations -- 64-Mbit Density
Density Product # Sym Parameter VCC Note 2.7 V-3.6 V Min Max 2.7 V-3.6 V Min Max 70 ns 64 Mbit 80 ns Unit
R1 R2 R3 R4 R5 R6 R7 R8 R9 R10
tAVAV tAVQV tELQV tGLQV tPHQV tELQX tGLQX tEHQZ tGHQZ tOH
Read Cycle Time Address to Output Delay CE# to Output Delay OE# to Output Delay RP# to Output Delay CE# to Output in Low Z OE# to Output in Low Z CE# to Output in High Z OE# to Output in High Z Output Hold from Address, CE#, or OE# Change, Whichever Occurs First
3,4 3,4 1,3,4 1,3,4 3,4 2,3,4 2,3,4 2,3,4 2,3,4 2,3,4
70 70 70 20 150 0 0 20 20 0
80 80 80 20 150 0 0 20 20 0
ns ns ns ns ns ns ns ns ns ns
Notes: 1.OE# may be delayed up to tELQV-tGLQV after the falling edge of CE# without impact on tELQV. 2.Sampled, but not 100% tested. 3.See Figure 9, "Read Operation Waveform" on page 28. 4.See Figure 11, "AC Input/Output Reference Waveform" on page 33 for timing measurements and maximum allowable input slew rate.
Figure 9.
Read Operation Waveform
R1 R2 Address [A] R3 CE# [E] R4 OE# [G] WE# [W] R7 R6 Data [D/Q] R5 RST# [P] R10 R9 R8
May 2005 28
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
7.2
Table 12.
AC Write Characteristics
Write Operations--8-Mbit Density
Density Product # Sym Parameter 3.0 V - 3.6 V VCC 2.7 V - 3.6 V Note 70 Min (ns) Min (ns) 90 Min (ns) Min (ns) 110 Min (ns) 70ns 80 8 Mbit 90 ns 110 ns 100
W1 W2 W3 W4 W5 W6 W7 W8 W9 W10 W11 W12 W13 W14
tPHWL / tPHEL tELWL / tWLEL tWLWH / tELEH tDVWH / tDVEH tAVWH / tAVEH tWHEH / tEHWH tWHDX / tEHDX tWHAX / tEHAX tWHWL / tEHEL tVPWH / tVPEH tQVVL tBHWH / tBHEH tQVBL tWHGL
RP# High Recovery to WE# (CE#) Going Low CE# (WE#) Setup to WE# (CE#) Going Low WE# (CE#) Pulse Width Data Setup to WE# (CE#) Going High Address Setup to WE# (CE#) Going High CE# (WE#) Hold Time from WE# (CE#) High Data Hold Time from WE# (CE#) High Address Hold Time from WE# (CE#) High WE# (CE#) Pulse Width High VPP Setup to WE# (CE#) Going High VPP Hold from Valid SRD WP# Setup to WE# (CE#) Going High WP# Hold from Valid SRD WE# High to OE# Going Low
4,5 4,5 4,5 2,4,5 2,4,5 4,5 2,4,5 2,4,5 2,4,5 3,4,5 3,4 3,4 3,4 3,4
150 0 45 40 50 0 0 0 25 200 0 0 0 30
150 0 50 50 50 0 0 0 30 200 0 0 0 30
150 0 60 50 60 0 0 0 30 200 0 0 0 30
150 0 70 60 70 0 0 0 30 200 0 0 0 30
150 0 70 60 70 0 0 0 30 200 0 0 0 30
Notes: 1.Write pulse width (tWP) is defined from CE# or WE# going low (whichever goes low last) to CE# or WE# going high (whichever goes high first). Hence, tWP = tWLWH = tELEH = tWLEH = tELWH. Similarly, write pulse width high (tWPH) is defined from CE# or WE# going high (whichever goes high first) to CE# or WE# going low (whichever goes low last). Hence, tWPH = tWHWL = tEHEL = tWHEL = tEHWL. 2.Refer to Table 22, "Command Bus Operations" on page 46 for valid AIN or DIN. 3.Sampled, but not 100% tested. 4.See Figure 11, "AC Input/Output Reference Waveform" on page 33 for timing measurements and maximum allowable input slew rate. 5.See Figure 10, "Write Operations Waveform" on page 32.
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 29
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Table 13.
Write Operations--16-Mbit Density
Density Product 70 ns 80 ns 16 Mbit 90 ns 80 70 Min 80 Min Min 90 Min Min 110 ns 100 110 Min Unit
#
Sym
Parameter VCC
3.0 V - 3.6 V 2.7 V - 3.6 V Note
W1 W2 W3 W4 W5 W6 W7 W8 W9 W10 W11 W12 W13 W14
tPHWL / tPHEL tELWL / tWLEL tWLWH / tELEH tDVWH / tDVEH tAVWH / tAVEH tWHEH / tEHWH tWHDX / tEHDX tWHAX / tEHAX tWHWL / tEHEL tVPWH / tVPEH tQVVL tBHWH / tBHEH tQVBL tWHGL
RP# High Recovery to WE# (CE#) Going Low CE# (WE#) Setup to WE# (CE#) Going Low WE# (CE#) Pulse Width Data Setup to WE# (CE#) Going High Address Setup to WE# (CE#) Going High CE# (WE#) Hold Time from WE# (CE#) High Data Hold Time from WE# (CE#) High Address Hold Time from WE# (CE#) High WE# (CE#) Pulse Width High VPP Setup to WE# (CE#) Going High VPP Hold from Valid SRD WP# Setup to WE# (CE#) Going High WP# Hold from Valid SRD WE# High to OE# Going Low
4,5 4,5 1,4,5 2,4,5 2,4,5 4,5 2,4,5 2,4,5 1,4,5 3,4,5 3,4 3,4 3,4 3,4
150 0 45 40 50 0 0 0 25 200 0 0 0 30
150 0 50 40 50 0 0 0 30 200 0 0 0 30
150 0 50 50 50 0 0 0 30 200 0 0 0 30
150 0 60 50 60 0 0 0 30 200 0 0 0 30
150 0 70 60 70 0 0 0 30 200 0 0 0 30
150 0 70 60 70 0 0 0 30 200 0 0 0 30
ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Notes: 1.Write pulse width (tWP) is defined from CE# or WE# going low (whichever goes low last) to CE# or WE# going high (whichever goes high first). Hence, tWP = tWLWH = tELEH = tWLEH = tELWH. Similarly, write pulse width high (tWPH) is defined from CE# or WE# going high (whichever goes high first) to CE# or WE# going low (whichever goes low last). Hence, tWPH = tWHWL = tEHEL = tWHEL = tEHWL. 2.Refer to Table 22, "Command Bus Operations" on page 46 for valid AIN or DIN. 3.Sampled, but not 100% tested. 4.See Figure 11, "AC Input/Output Reference Waveform" on page 33 for timing measurements and maximum allowable input slew rate. 5.See Figure 10, "Write Operations Waveform" on page 32.
May 2005 30
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Table 14.
Write Operations--32-Mbit Density
Density Product 70 ns 90 ns 90 70 Min 90 Min Min 100 Min Min 32 Mbit 100 ns 110 ns 100 110 Min Unit
#
Sym
Parameter VCC
3.0 V - 3.6 V6 2.7 V - 3.6 V Note
W1 W2
tPHWL / tPHEL tELWL / tWLEL tWLWH / tELEH tDVWH / tDVEH tAVWH / tAVEH tWHEH / tEHWH tWHDX / tEHDX tWHAX / tEHAX tWHWL / tEHEL tVPWH / tVPEH tQVVL tBHWH / tBHEH tQVBL tWHGL
RP# High Recovery to WE# (CE#) Going Low CE# (WE#) Setup to WE# (CE#) Going Low WE# (CE#) Pulse Width
4,5 4,5
150 0
150 0
150 0
150 0
150 0
150 0
ns ns
W3
1,4,5
45
60
60
70
70
70
ns
W4 W5 W6 W7 W8 W9 W10 W11 W12 W13 W14
Data Setup to WE# (CE#) Going High Address Setup to WE# (CE#) Going High CE# (WE#) Hold Time from WE# (CE#) High Data Hold Time from WE# (CE#) High Address Hold Time from WE# (CE#) High WE# (CE#) Pulse Width High VPP Setup to WE# (CE#) Going High VPP Hold from Valid SRD WP# Setup to WE# (CE#) Going High WP# Hold from Valid SRD WE# High to OE# Going Low
2,4,5 2,4,5 4,5 2,4,5 2,4,5 1,4,5 3,4,5 3,4 3,4 3,4 3,4
40 50 0 0 0 25 200 0 0 0 30
40 60 0 0 0 30 200 0 0 0 30
50 60 0 0 0 30 200 0 0 0 30
60 70 0 0 0 30 200 0 0 0 30
60 70 0 0 0 30 200 0 0 0 30
60 70 0 0 0 30 200 0 0 0 30
ns ns ns ns ns ns ns ns ns ns ns
Notes: 1.Write pulse width (tWP) is defined from CE# or WE# going low (whichever goes low last) to CE# or WE# going high (whichever goes high first). Hence, tWP = tWLWH = tELEH = tWLEH = tELWH. Similarly, write pulse width high (tWPH) is defined from CE# or WE# going high (whichever goes high first) to CE# or WE# going low (whichever goes low last). Hence, tWPH = tWHWL = tEHEL = tWHEL = tEHWL. 2.Refer to Table 22, "Command Bus Operations" on page 46 for valid AIN or DIN. 3.Sampled, but not 100% tested. 4.See Figure 11, "AC Input/Output Reference Waveform" on page 33 for timing measurements and maximum allowable input slew rate. 5.See Figure 10, "Write Operations Waveform" on page 32. 6.VCCMax = 3.3 V for 32-Mbit 0.25 Micron product.
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 31
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Table 15.
Write Operations--64-Mbit Density
Density 64 Mbit 80 ns Note Min Unit
#
Symbol
Parameter VCC
Product 2.7 V - 3.6 V
W1 W2 W3 W4 W5 W6 W7 W8 W9 W10 W11 W12 W13 W14
tPHWL / tPHEL tELWL / tWLEL tWLWH / tELEH tDVWH / tDVEH tAVWH / tAVEH tWHEH / tEHWH tWHDX / tEHDX tWHAX / tEHAX tWHWL / tEHEL tVPWH / tVPEH tQVVL tBHWH / tBHEH tQVBL tWHGL
RP# High Recovery to WE# (CE#) Going Low CE# (WE#) Setup to WE# (CE#) Going Low WE# (CE#) Pulse Width Data Setup to WE# (CE#) Going High Address Setup to WE# (CE#) Going High CE# (WE#) Hold Time from WE# (CE#) High Data Hold Time from WE# (CE#) High Address Hold Time from WE# (CE#) High WE# (CE#) Pulse Width High VPP Setup to WE# (CE#) Going High VPP Hold from Valid SRD WP# Setup to WE# (CE#) Going High WP# Hold from Valid SRD WE# High to OE# Going Low
4,5 4,5 1,4,5 2,4,5 2,4,5 4,5 2,4,5 2,4,5 1,4,5 3,4,5 3,4 3,4 3,4 3,4
150 0 60 40 60 0 0 0 30 200 0 0 0 30
ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Notes: 1.Write pulse width (tWP) is defined from CE# or WE# going low (whichever goes low last) to CE# or WE# going high (whichever goes high first). Hence, tWP = tWLWH = tELEH = tWLEH = tELWH. Similarly, write pulse width high (tWPH) is defined from CE# or WE# going high (whichever goes high first) to CE# or WE# going low (whichever goes low last). Hence, tWPH = tWHWL = tEHEL = tWHEL = tEHWL. 2.Refer to Table 22, "Command Bus Operations" on page 46 for valid AIN or DIN. 3.Sampled, but not 100% tested. 4.See Figure 11, "AC Input/Output Reference Waveform" on page 33 for timing measurements and maximum allowable input slew rate. 5.See Figure 10, "Write Operations Waveform" on page 32.
Figure 10.
Write Operations Waveform
W5 Address [A] W6 CE# [E] W3 W2 WE# [W] OE# [G] W4 Data [D/Q] W1 RP# [P] W10 Vpp [V] W7 W9 W8
May 2005 32
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
7.3
Table 16.
Erase and Program Timings
Erase and Program Timings
VPP Symbol Parameter Note Typ Max Typ Max 1.65 V-3.6 V 11.4 V-12.6 V Unit
tBWPB tBWMB
4-KW Parameter Block Word Program Time 32-KW Main Block Word Program Time Word Program Time for 0.13 and 0.18 Micron Product
1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1,3 1,3
0.10 0.8 12 22 0.5 1 5 5
0.30 2.4 200 200 4 5 10 20
0.03 0.24 8 8 0.4 0.6 5 5
0.12 1 185 185 4 5 10 20
s s s s s s s s
tWHQV1 / tEHQV1
Word Program Time for 0.25 Micron Product 4-KW Parameter Block Erase Time 32-KW Main Block Erase Time Program Suspend Latency Erase Suspend Latency
tWHQV2 / tEHQV2 tWHQV3 / tEHQV3 tWHRH1 / tEHRH1 tWHRH2 / tEHRH2
Notes: 1.Typical values measured at TA= +25 C and nominal voltages. 2.Excludes external system-level overhead. 3.Sampled, but not 100% tested.
7.4
Figure 11.
AC I/O Test Conditions
AC Input/Output Reference Waveform
VCCQ Input 0V
Note:
VCCQ/2
Test Points
VCCQ/2
Output
Input timing begins, and output timing ends, at VCCQ/2. Input rise and fall times (10% to 90%) < 5 ns. Worst-case speed conditions are when VCC = VCCMin.
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 33
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Figure 12.
Transient Equivalent Testing Load Circuit
VCCQ R1
Device Under Test
Out CL R2
Note:
See Table 17 for component values.
Table 17.
Test Configuration Component Values for Worst-Case Speed Conditions
Test Configuration CL (pF) R1 (k) R2 (k)
VCCQMin Standard Test
Note:
50
25
25
CL includes jig capacitance.
7.5
Device Capacitance
TA = 25 C, f = 1 MHz
Table 18.
Device Capacitance
Symbol Parameter Typ Max Unit Condition
CIN COUT
Input Capacitance Output Capacitance
6 8
8 12
pF pF
VIN = 0.0 V VOUT = 0.0 V
Sampled, not 100% tested.
May 2005 34
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
8.0
Power and Reset Specifications
Intel(R) flash devices have a tiered approach to power savings that can significantly reduce overall system power consumption. The Automatic Power Savings (APS) feature reduces power consumption when the device is selected but idle. If CE# is deasserted, the flash enters its standby mode, where current consumption is even lower. If RP# is deasserted, the flash enter deep powerdown mode for ultra-low current consumption. The combination of these features can minimize memory power consumption, and therefore, overall system power consumption.
8.1
Active Power (Program/Erase/Read)
With CE# at a logic-low level and RP# at a logic-high level, the device is in the active mode. Refer to the DC Characteristic tables for ICC current values. Active power is the largest contributor to overall system power consumption. Minimizing the active current could have a profound effect on system power consumption, especially for battery-operated devices.
8.2
Automatic Power Savings (APS)
Automatic Power Savings provides low-power operation during read mode. After data is read from the memory array and the address lines are idle, APS circuitry places the device in a mode where typical current is comparable to ICCS. The flash stays in this static state with outputs valid until a new location is read.
8.3
Standby Power
When CE# is at a logic-high level (VIH), the flash memory is in standby mode, which disables much of the device's circuitry and substantially reduces power consumption. Outputs are placed in a high-impedance state independent of the status of the OE# signal. If CE# transitions to a logichigh level during Erase or Program operations, the device will continue to perform the operation and consume corresponding active power until the operation is completed. System engineers should analyze the breakdown of standby time versus active time and quantify the respective power consumption in each mode for their specific application. This approach will provide a more accurate measure of application-specific power and energy requirements.
8.4
Deep Power-Down Mode
The deep power-down mode is activated when RP# = VIL. During read modes, RP# going low deselects the memory and places the outputs in a high-impedance state. Recovery from deep powerdown requires a minimum time of tPHQV for read operations, and tPHWL/tPHEL for write operations. During program or erase modes, RP# transitioning low aborts the in-progress operation. The memory contents of the address being programmed or the block being erased are no longer valid as the data integrity has been compromised by the abort. During deep power-down, all internal circuits are switched to a low-power savings mode (RP# transitioning to VIL or turning off power to the device clears the Status Register).
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 35
Intel(R) Advanced+ Boot Block Flash Memory (C3)
8.5
8.5.1
Power and Reset Considerations
Power-Up/Down Characteristics
To prevent any condition that may result in a spurious write or erase operation, Intel recommends to power-up VCC and VCCQ together. Conversely, VCC and VCCQ must power-down together. Intel also recommends that you power-up VPP with or after VCC has reached VCCmin. Conversely, VPP must powerdown with or slightly before VCC. If VCCQ and/or VPP are not connected to the VCC supply, then VCC must attain VCCmin before applying VCCQ and VPP. Device inputs must not be driven before supply voltage reaches VCCmin. Power supply transitions must only occur when RP# is low.
8.5.2
RP# Connected to System Reset
The use of RP# during system reset is important with automated program/erase devices since the system reads from the flash memory when it comes out of reset. If a CPU reset occurs without a flash memory reset, proper CPU initialization will not occur because the flash memory may be providing status information instead of array data. Intel recommends connecting RP# to the system CPU RESET# signal to allow proper CPU/flash initialization following system reset. System designers must guard against spurious writes when VCC voltages are above VLKO. Because both WE# and CE# must be low for a command write, driving either signal to VIH will inhibit writes to the device. The CUI architecture provides additional protection since alteration of memory contents can only occur after successful completion of the two-step command sequences. The device is also disabled until RP# is brought to VIH, regardless of the state of its control inputs. By holding the device in reset during power-up/down, invalid bus conditions during power-up can be masked, providing yet another level of memory protection.
8.5.3
VCC, VPP and RP# Transitions
The CUI latches commands as issued by system software and is not altered by VPP or CE# transitions or WSM actions. Its default state upon power-up, after exit from reset mode or after VCC transitions above VLKO (Lockout voltage), is read-array mode. After any program or Block-Erase operation is complete (even after VPP transitions down to VPPLK), the CUI must be reset to read-array mode by the Read Array command if access to the flash-memory array is desired.
May 2005 36
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
8.5.4
Table 19.
Reset Specifications
Reset Specifications
VCC 2.7 V - 3.6 V Symbol Parameter Min Max Unit Notes
tPLPH tPLRH1 tPLRH2
RP# Low to Reset during Read (If RP# is tied to VCC, this specification is not applicable) RP# Low to Reset during Block Erase RP# Low to Reset during Program
100 22 12
ns s s
1, 2 3 3
Notes: 1.If tPLPH is < 100 ns the device may still reset but this is not guaranteed. 2.If RP# is asserted while a Block Erase or Word Program operation is not executing, the reset will complete within 100 ns. 3.Sampled, but not 100% tested.
Figure 13.
Reset Operations Waveforms
RP# (P)
VIH VIL
t PLPH (A) Reset during Read Mode
t PHQV t PHWL t PHEL
Abort Complete
t PLRH
RP# (P)
V IH V IL
t PHQV t PHWL t PHEL
t PLPH (B) Reset during Program or Block Erase, t PLPH < t PLRH
Abort Deep Complete PowerDown
RP# (P)
V IH V IL
t PLRH
t PHQV t PHWL t PHEL
t PLPH
(C) Reset Program or Block Erase, t PLPH > t PLRH
8.6
Power Supply Decoupling
Flash memory power-switching characteristics require careful device decoupling. System designers should consider the following three supply current issues:
* Standby current levels (ICCS) * Read current levels (ICCR) * Transient peaks produced by falling and rising edges of CE#.
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 37
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Transient current magnitudes depend on the device outputs' capacitive and inductive loading. Twoline control and proper decoupling capacitor selection will suppress these transient voltage peaks. Each flash device should have a 0.1 F ceramic capacitor connected between each VCC and GND, and between its VPP and VSS. These high-frequency, inherently low-inductance capacitors should be placed as close as possible to the package leads.
May 2005 38
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
9.0
Device Operations
The Intel(R) Advanced+ Boot Block Flash Memory (C3) device uses a CUI and automated algorithms to simplify Program and Erase operations. The CUI allows for 100% CMOS-level control inputs and fixed power supplies during erasure and programming. The internal WSM completely automates Program and Erase operations while the CUI signals the start of an operation and the Status Register reports device status. The CUI handles the WE# interface to the data and address latches as well as system status requests during WSM operation.
9.1
Bus Operations
The Intel(R) Advanced+ Boot Block Flash Memory (C3) device performs read, program, and erase operations in-system through the local CPU or microcontroller. Four control pins (CE#, OE#, WE#, and RP#) manage the data flow in and out of the flash device. Table 20 on page 39 summarizes these bus operations.
Table 20.
Bus Operations
Mode RP# CE# OE# WE# DQ[15:0]
Read Write Output Disable Standby Reset
Note:
VIH VIH VIH VIH VIL X = Don't Care (VIL or VIH)
VIL VIL VIL VIH X
VIL VIH VIH X X
VIH VIL VIH X X
DOUT DIN High-Z High-Z High-Z
9.1.1
Read
When performing a read cycle, CE# and OE# must be asserted; WE# and RP# must be deasserted. CE# is the device selection control; when active low, it enables the flash memory device. OE# is the data output control; when low, data is output on DQ[15:0]. See Figure 9, "Read Operation Waveform" on page 28.
9.1.2
Write
A write cycle occurs when both CE# and WE# are low; RP# and OE# are high. Commands are issued to the Command User Interface (CUI). The CUI does not occupy an addressable memory location. Address and data are latched on the rising edge of the WE# or CE# pulse, whichever occurs first. See Figure 10, "Write Operations Waveform" on page 32.
9.1.3
Output Disable
With OE# at a logic-high level (VIH), the device outputs are disabled. DQ[15:0] are placed in a high-impedance state.
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 39
Intel(R) Advanced+ Boot Block Flash Memory (C3)
9.1.4
Standby
Deselecting the device by bringing CE# to a logic-high level (VIH) places the device in standby mode, which substantially reduces device power consumption without any latency for subsequent read accesses. In standby, outputs are placed in a high-impedance state independent of OE#. If deselected during a Program or Erase operation, the device continues to consume active power until the Program or Erase operation is complete.
9.1.5
Reset
From read mode, RP# at VIL for time tPLPH deselects the memory, places output drivers in a highimpedance state, and turns off all internal circuits. After return from reset, a time tPHQV is required until the initial read-access outputs are valid. A delay (tPHWL or tPHEL) is required after return from reset before a write cycle can be initiated. After this wake-up interval, normal operation is restored. The CUI resets to read-array mode, the Status Register is set to 0x80, and all blocks are locked. See Figure 13, "Reset Operations Waveforms" on page 37. If RP# is taken low for time tPLPH during a Program or Erase operation, the operation will be aborted; the memory contents at the aborted location (for a program) or block (for an erase) are no longer valid, since the data may be partially erased or written. The abort process goes through the following sequence: 1. When RP# goes low, the device shuts down the operation in progress, a process which takes time tPLRH to complete. 2. After time tPLRH, the part will either reset to read-array mode (if RP# is asserted during tPLRH) or enter reset mode (if RP# is deasserted after tPLRH). See Figure 13, "Reset Operations Waveforms" on page 37. In both cases, after returning from an aborted operation, the relevant time tPHQV or tPHWL/tPHEL must be observed before a Read or Write operation is initiated, as discussed in the previous paragraph. However, in this case, these delays are referenced to the end of tPLRH rather than when RP# goes high. As with any automated device, it is important to assert RP# during a system reset. When the system comes out of reset, the processor reads from the flash memory. Automated flash memories provide status information when read during Program or Block-Erase operations. If a CPU reset occurs with no flash memory reset, proper CPU initialization may not occur because the flash memory may be providing status information instead of array data. Intel(R) flash memories allow proper CPU initialization following a system reset through the use of the RP# input. In this application, RP# is controlled by the same RESET# signal that resets the system CPU.
May 2005 40
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
10.0
10.1
Modes of Operation
Read Mode
The flash memory has four read modes (read array, read identifier, read status, and CFI query) and two write modes (program and erase). Three additional modes (erase suspend to program, erase suspend to read, and program suspend to read) are available only during suspended operations. Table 22, "Command Bus Operations" on page 46 and Table 23, "Command Codes and Descriptions" on page 47 summarize the commands used for these modes. Appendix A, "Write State Machine States" on page 54 is a comprehensive chart showing the state transitions.
10.1.1
Read Array
When RP# transitions from VIL (reset) to VIH, the device defaults to read-array mode and will respond to the read-control inputs (CE#, address inputs, and OE#) without any additional CUI commands. When the device is in read array mode, four control signals control data output.
* * * *
WE# must be logic high (VIH) CE# must be logic low (VIL) OE# must be logic low (VIL) RP# must be logic high (VIH)
In addition, the address of the desired location must be applied to the address pins. If the device is not in read-array mode, as would be the case after a Program or Erase operation, the Read Array command (0xFF) must be issued to the CUI before array reads can occur.
10.1.2
Read Identifier
The read-identifier mode outputs three types of information: the manufacturer/device identifier, the block locking status, and the protection register. The device is switched to this mode by issuing the Read Identifier command (0x90). Once in this mode, read cycles from addresses shown in Table 21 retrieve the specified information. To return to read-array mode, issue the Read Array command (0xFF).
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 41
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Table 21.
Device Identification Codes
Address1 Item Base Offset Data Description
Manufacturer ID
Block
0x00
0x0089 0x88C0 0x88C1 0x88C2 8-Mbit Top Boot Device 8-Mbit Bottom Boot Device 16-Mbit Top Boot Device 16-Mbit Bottom Boot Device 32-Mbit Top Boot Device 32-Mbit Bottom Boot Device 64-Mbit Top Boot Device 64-Mbit Bottom Boot Device Block is unlocked Block is locked Block is not locked-down Block is locked down
Device ID
Block
0x01
0x88C3 0x88C4 0x88C5 0x88CC 0x88CD
Block Lock Status2
Block
0x02
DQ0 = 0b0 DQ0 = 0b1 DQ1 = 0b0 DQ1 = 0b1 Lock Data Register Data
Block Lock-Down Status2 Protection Register Lock Status Protection Register
Block Block Block
0x02 0x80 0x81 - 0x88
Multiple reads required to read the entire 128-bit Protection Register.
Notes: 1.The address is constructed from a base address plus an offset. For example, to read the Block Lock Status for block number 38 in a bottom boot device, set the address to 0x0F8000 plus the offset (0x02), i.e. 0x0F8002. Then examine DQ0 of the data to determine if the block is locked. 2.See Section 11.2, "Reading Block-Lock Status" on page 50 for valid lock status.
10.1.3
CFI Query
The CFI query mode outputs Common Flash Interface (CFI) data after issuing the Read Query Command (0x98). The CFI data structure contains information such as block size, density, command set, and electrical specifications. Once in this mode, read cycles from addresses shown in Appendix C, "Common Flash Interface," retrieve the specified information. To return to read-array mode, issue the Read Array command (0xFF).
10.1.4
Read Status Register
The Status Register indicates the status of device operations and the success/failure of that operation. The Read Status Register (0x70) command causes subsequent reads to output data from the Status Register until another command is issued. To return to reading from the array, issue a Read Array (0xFF) command. The Status Register bits are output on DQ[7:0]. The upper byte, DQ[15:8], outputs 0x00 when a Read Status Register command is issued.
May 2005 42
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
The contents of the Status Register are latched on the falling edge of OE# or CE# (whichever occurs last) which prevents possible bus errors that might occur if Status Register contents change while being read. CE# or OE# must be toggled with each subsequent status read, or the Status Register will not indicate completion of a Program or Erase operation. When the WSM is active, SR[7] will indicate the status of the WSM; the remaining bits in the Status Register indicate whether the WSM was successful in performing the preferred operation See Table 24, "Status Register Bit Definition" on page 48.
10.1.4.1
Clear Status Register
The WSM can set Status Register bits 1 through 7 and can clear bits 2, 6, and 7, but the WSM cannot clear Status Register bits 1, 3, 4 or 5. Because bits 1, 3, 4, and 5 indicate various error conditions, these bits can be cleared only through the Clear Status Register (0x50) command. By allowing the system software to control the resetting of these bits, several operations may be performed (such as cumulatively programming several addresses or erasing multiple blocks in sequence) before reading the Status Register to determine if an error occurred during that series. Clear the Status Register before beginning another command or sequence. The Read Array command must be issued before data can be read from the memory array. Resetting the device also clears the Status Register.
10.2
Program Mode
Programming is executed using a two-write cycle sequence. The Program Setup command (0x40) is issued to the CUI, followed by a second write that specifies the address and data to be programmed. The WSM will execute a sequence of internally timed events to program preferred bits of the addressed location, then verify the bits are sufficiently programmed. Programming the memory results in specific bits within an address location being changed to a "0." If users attempt to program "1"s, the memory cell contents do not change and no error occurs. The Status Register indicates programming status. While the program sequence executes, status bit 7 is "0." The Status Register can be polled by toggling either CE# or OE#. While programming, the only valid commands are Read Status Register, Program Suspend, and Program Resume. When programming is complete, the program-status bits must be checked. If the programming operation was unsuccessful, SR[4] is set to indicate a program failure. If SR[3] is set, then VPP was not within acceptable limits, and the WSM did not execute the program command. If SR[1] is set, a program operation was attempted on a locked block and the operation was aborted. The Status Register should be cleared before attempting the next operation. Any CUI instruction can follow after programming is completed; however, to prevent inadvertent Status Register reads, be sure to reset the CUI to read-array mode.
10.2.1
12-Volt Production Programming
When VPP is between 1.65 V and 3.6 V, all program and erase current is drawn through the VCC pin.
Note:
If VPP is driven by a logic signal, VIH min = 1.65 V. That is, VPP must remain above 1.65 V to perform in-system flash modifications.
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 43
Intel(R) Advanced+ Boot Block Flash Memory (C3)
When VPP is connected to a 12 V power supply, the device draws program and erase current directly from the VPP pin. This eliminates the need for an external switching transistor to control VPP. Figure 16 on page 53 shows examples of how the flash power supplies can be configured for various usage models. The 12 V VPP mode enhances programming performance during the short period of time typically found in manufacturing processes; however, it is not intended for extended use. You cna apply 12 V to VPP during Program and Erase operations for a maximum of 1000 cycles on the main blocks and 2500 cycles on the parameter blocks. VPP may be connected to 12 V for a total of 80 hours maximum. Stressing the device beyond these limits may cause permanent damage.
10.2.2
Suspending and Resuming Program
The Program Suspend command halts an in-progress program operation so that data can be read from other locations of memory. Once the programming process starts, issuing the Program Suspend command to the CUI requests that the WSM suspend the program sequence at predetermined points in the program algorithm. The device continues to output Status Register data after the Program Suspend command is issued. Polling SR[7] and SR[2] will determine when the program operation has been suspended (both will be set to "1"). The program-suspend latency is specified with tWHRH1/tEHRH1. A Read-Array command can now be issued to the CUI to read data from blocks other than that which is suspended. The only other valid commands while program is suspended are Read Status Register, Read Identifier, CFI Query, and Program Resume. After the Program Resume command is issued to the flash memory, the WSM will continue with the programming process and SR[2] and SR[7] will automatically be cleared. The device automatically outputs Status Register data when read (see Figure 18, "Program Suspend / Resume Flowchart" on page 57) after the Program Resume command is issued. VPP must remain at the same VPP level used for program while in program-suspend mode. RP# must also remain at VIH.
10.3
Erase Mode
To erase a block, issue the Erase Set-up and Erase Confirm commands to the CUI, along with an address identifying the block to be erased. This address is latched internally when the Erase Confirm command is issued. Block erasure results in all bits within the block being set to "1." Only one block can be erased at a time. The WSM will execute a sequence of internally timed events to program all bits within the block to "0," erase all bits within the block to "1," then verify that all bits within the block are sufficiently erased. While the erase executes, status bit 7 is a "0." When the Status Register indicates that erasure is complete, check the erase-status bit to verify that the Erase operation was successful. If the Erase operation was unsuccessful, SR[5] of the Status Register will be set to a "1," indicating an erase failure. If VPP is not within acceptable limits after the Erase Confirm command was issued, the WSM will not execute the erase sequence; instead, SR[5] of the Status Register is set to indicate an erase error, and SR[3] is set to a "1" to identify that VPP supply voltage is not within acceptable limits. After an Erase operation, clear the Status Register (0x50) before attempting the next operation. Any CUI instruction can follow after erasure is completed; however, to prevent inadvertent statusregister reads, Intel recommends that you place the flash in read-array mode after the erase is complete.
May 2005 44
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
10.3.1
Suspending and Resuming Erase
Since an Erase operation requires on the order of seconds to complete, an Erase Suspend command is provided to allow erase-sequence interruption to read data from--or program data to-- another block in memory. Once the erase sequence is started, issuing the Erase Suspend command to the CUI suspends the erase sequence at a predetermined point in the erase algorithm. The Status Register indicates if/when the Erase operation has been suspended. Erase-suspend latency is specified by tWHRH2/tEHRH2. A Read Array or Program command can now be issued to the CUI to read/program data from/to blocks other than that which is suspended. This nested Program command can subsequently be suspended to read yet another location. The only valid commands while Erase is suspended are Read Status Register, Read Identifier, CFI Query, Program Setup, Program Resume, Erase Resume, Lock Block, Unlock Block, and Lock-Down Block. During erase-suspend mode, the device can be placed in a pseudo-standby mode by taking CE# to VIH, which reduces active current consumption. Erase Resume continues the erase sequence when CE# = VIL. Similar to the end of a standard Erase operation, the Status Register must be read and cleared before the next instruction is issued.
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 45
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Table 22.
Command Bus Operations
First Bus Cycle Command Notes Oper Addr Data Oper Addr Data Second Bus Cycle
Read Array Read Identifier CFI Query Read Status Register Clear Status Register Program Block Erase/Confirm Program/Erase Suspend Program/Erase Resume Lock Block Unlock Block Lock-Down Block Protection Program
1,3 1,3 1,3 1,3 1,3 2,3 1,3 1,3 1,3 1,3 1,3 1,3 1,3
Write Write Write Write Write Write Write Write Write Write Write Write Write
X X X X X X X X X X X X X
0xFF 0x90 0x98 0x70 0x50 0x40/ 0x10 0x20 0xB0 0xD0 0x60 0x60 0x60 0xC0 Write Write Write Write BA BA BA PA 0x01 0xD0 0x2F PD Write Write PA BA PD D0H Read Read Read IA QA X ID QD SRD
X = "Don't Care" SRD = Status Reg. Data
PA = Prog Addr PD = Prog Data
BA = Block Addr
IA = Identifier Addr. ID = Identifier Data
QA = Query Addr. QD = Query Data
Notes: 1.Following the Read Identifier or CFI Query commands, read operations output device identification data or CFI query information, respectively. See Section 10.1.2 and Section 10.1.3. 2.Either 0x40 or 0x10 command is valid, but the Intel standard is 0x40. 3.When writing commands, the upper data bus [DQ8-DQ15] should be either VIL or VIH, to minimize current draw.
Bus operations are defined in Table 20, "Bus Operations" on page 39.
May 2005 46
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Table 23.
Code (HEX)
Command Codes and Descriptions
Device Mode Command Description
FF
Read Array
This command places the device in read-array mode, which outputs array data on the data pins. This is a two-cycle command. The first cycle prepares the CUI for a program operation. The second cycle latches addresses and data information and initiates the WSM to execute the Program algorithm. The flash outputs Status Register data when CE# or OE# is toggled. A Read Array command is required after programming to read array data. See Section 10.2, "Program Mode" on page 43. This is a two-cycle command. It prepares the CUI for the Erase Confirm command. If the next command is not an Erase Confirm command, then the CUI will (a) set both SR.4 and SR.5 to "1," (b) place the device into the read-Status Register mode, and (c) wait for another command. See Section 10.3, "Erase Mode" on page 44. If the previous command was an Erase Set-Up command, then the CUI will close the address and data latches and begin erasing the block indicated on the address pins. During program/erase, the device will respond only to the Read Status Register, Program Suspend and Erase Suspend commands, and will output Status Register data when CE# or OE# is toggled. If a Program or Erase operation was previously suspended, this command will resume that operation. If the previous command was Block Unlock Set-Up, the CUI will latch the address and unlock the block indicated on the address pins. If the block had been previously set to Lock-Down, this operation will have no effect. (See Section 11.1) Issuing this command will begin to suspend the currently executing Program/Erase operation. The Status Register will indicate when the operation has been successfully suspended by setting either the program-suspend SR[2] or erase-suspend SR[6] and the WSM status bit SR[7] to a "1" (ready). The WSM will continue to idle in the SUSPEND state, regardless of the state of all inputcontrol pins except RP#, which will immediately shut down the WSM and the remainder of the chip if RP# is driven to VIL. See Sections 3.2.5.1 and 3.2.6.1. This command places the device into read-Status Register mode. Reading the device will output the contents of the Status Register, regardless of the address presented to the device. The device automatically enters this mode after a Program or Erase operation has been initiated. See Section 10.1.4, "Read Status Register" on page 42. The WSM can set the block-lock status SR[1], VPP Status SR[3], program status SR[4], and erasestatus SR[5] bits in the Status Register to "1," but it cannot clear them to "0." Issuing this command clears those bits to "0." This command puts the device into the read-identifier mode so that reading the device will output the manufacturer/device codes or block-lock status. See Section 10.1.2, "Read Identifier" on page 41. This command prepares the CUI for block-locking changes. If the next command is not Block Unlock, Block Lock, or Block Lock-Down, then the CUI will set both the program and erase-Status Register bits to indicate a command-sequence error. See Section 11.0, "Security Modes" on page 49. If the previous command was Lock Set-Up, the CUI will latch the address and lock the block indicated on the address pins. (See Section 11.1) If the previous command was a Lock-Down Set-Up command, the CUI will latch the address and lock-down the block indicated on the address pins. (See Section 11.1) This command puts the device into the CFI-Query mode so that reading the device will output Common Flash Interface information. See Section 10.1.3 and Appendix C, "Common Flash Interface". This is a two-cycle command. The first cycle prepares the CUI for a program operation to the protection register. The second cycle latches addresses and data information and initiates the WSM to execute the Protection Program algorithm to the protection register. The flash outputs Status Register data when CE# or OE# is toggled. A Read Array command is required after programming to read array data. See Section 11.5. Operates the same as Program Set-up command. (See 0x40/Program Set-Up) Unassigned commands should not be used. Intel reserves the right to redefine these codes for future functions.
40
Program Set-Up
20
Erase Set-Up
Erase Confirm D0 Program/Erase Resume Unlock Block
B0
Program Suspend Erase Suspend
70
Read Status Register Clear Status Register Read Identifier Block Lock, Block Unlock, Block Lock-Down Set-Up Lock-Block Lock-Down CFI Query
50
90
60
01 2F 98
C0
Protection Program Set-Up Alt. Prog Set-Up Invalid/ Reserved
10 00
Note:
See Appendix A, "Write State Machine States" for mode transition information.
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 47
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Table 24.
WSMS 7
Status Register Bit Definition
ESS 6 ES 5 PS 4 VPPS 3 PSS 2
NOTES:
BLS 1
R 0
SR[7] WRITE STATE MACHINE STATUS (WSMS) 1 = Ready 0 = Busy SR[6] = ERASE-SUSPEND STATUS (ESS) 1 = Erase Suspended 0 = Erase In Progress/Completed SR[5] = ERASE STATUS (ES) 1 = Error In Block Erase 0 = Successful Block Erase SR[4] = PROGRAM STATUS (PS) 1 = Error in Programming 0 = Successful Programming
Before checking program or erase- status bits, check the Write State Machine bit first to determine Word Program or Block Erase completion. When Erase Suspend is issued, WSM halts execution and sets both WSMS and ESS bits to "1." ESS bit remains set to "1" until an Erase Resume command is issued. When this bit is set to "1," WSM has applied the maximum number of erase pulses to the block and is still unable to verify successful block erasure. When this bit is set to "1," WSM has attempted but failed to program a word/byte. The VPP status bit does not provide continuous indication of VPP level. The WSM interrogates VPP level only after the Program or Erase command sequences have been entered and informs the system if VPP has not been switched on. The VPP is also checked before the operation is verified by the WSM. The VPP status bit is not guaranteed to report accurate feedback between VPPLK and VPP1Min. When Program Suspend is issued, WSM halts execution and sets both WSMS and PSS bits to "1." PSS bit remains set to "1" until a Program Resume command is issued. If a Program or Erase operation is attempted to one of the locked blocks, this bit is set by the WSM. The operation specified is aborted and the device is returned to read status mode. This bit is reserved for future use and should be masked out when polling the Status Register.
SR[3] = VPP STATUS (VPPS) 1 = VPP Low Detect, Operation Abort 0 = VPP OK
SR[2] = PROGRAM SUSPEND STATUS (PSS) 1 = Program Suspended 0 = Program in Progress/Completed SR[1] = BLOCK LOCK STATUS 1 = Prog/Erase attempted on a locked block; Operation aborted. 0 = No operation to locked blocks SR[0] = RESERVED FOR FUTURE ENHANCEMENTS (R)
Note:
A Command-Sequence Error is indicated when SR[4], SR[5], and SR[7] are set.
May 2005 48
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
11.0
11.1
Security Modes
Flexible Block Locking
The Intel(R) Advanced+ Boot Block Flash Memory (C3) device offers an instant, individual blocklocking scheme that allows any block to be locked or unlocked with no latency, enabling instant code and data protection. This locking scheme offers two levels of protection. The first level allows software-only control of block locking (useful for data blocks that change frequently), while the second level requires hardware interaction before locking can be changed (useful for code blocks that change infrequently). The following sections will discuss the operation of the locking system. The term "state [abc]" will be used to specify locking states; for example, "state [001]," where a = value of WP#, b = bit D1 of the Block Lock Status Register, and c = bit D0 of the Block Lock Status Register. Figure 14, "Block Locking State Diagram" on page 49 displays all of the possible locking states.
Figure 14.
Block Locking State Diagram
Power-Up/Reset
Locked [X01]
LockedDown4,5 [011]
Hardware Locked5 [011]
WP# Hardware Control
Unlocked [X00]
Software Locked [111]
Unlocked [110]
Software Block Lock (0x60/0x01) or Software Block Unlock (0x60/0xD0) Software Block Lock-Down (0x60/0x2F) WP# hardware control
Notes:
1. [a,b,c] represents [WP#, D1, D0]. X = Don't Care. 2. D1 indicates block Lock-down status. D1 = `0', Lock-down has not been issued to this block. D1 = `1', Lock-down has been issued to this block. 3. D0 indicates block lock status. D0 = `0', block is unlocked. D0 = `1', block is locked. 4. Locked-down = Hardware + Software locked. 5. [011] states should be tracked by system software to determine difference between Hardware Locked and Locked-Down states.
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 49
Intel(R) Advanced+ Boot Block Flash Memory (C3)
11.1.1
Locking Operation
The locking status of each block can be set to Locked, Unlocked, or Lock-Down, each of which will be described in the following sections. See Figure 14, "Block Locking State Diagram" on page 49 and Figure 21, "Locking Operations Flowchart" on page 60. The following paragraph concisely summarizes the locking functionality.
11.1.1.1
Locked State
The default state of all blocks upon power-up or reset is locked (states [001] or [101]). Locked blocks are fully protected from alteration. Any Program or Erase operations attempted on a locked block will return an error on bit SR[1]. The state of a locked block can be changed to Unlocked or Lock Down using the appropriate software commands. An Unlocked block can be locked by writing the Lock command sequence, 0x60 followed by 0x01.
11.1.1.2
Unlocked State
Unlocked blocks (states [000], [100], [110]) can be programmed or erased. All unlocked blocks return to the Locked state when the device is reset or powered down. The status of an unlocked block can be changed to Locked or Locked Down using the appropriate software commands. A Locked block can be unlocked by writing the Unlock command sequence, 0x60 followed by 0xD0.
11.1.1.3
Lock-Down State
Blocks that are Locked-Down (state [011]) are protected from Program and Erase operations (just like Locked blocks), but their protection status cannot be changed using software commands alone. A Locked or Unlocked block can be Locked Down by writing the Lock-Down command sequence, 0x60 followed by 0x2F. Locked-Down blocks revert to the Locked state when the device is reset or powered down. The Lock-Down function depends on the WP# input pin. When WP# = 0, blocks in Lock Down [011] are protected from program, erase, and lock status changes. When WP# = 1, the Lock-Down function is disabled ([111]), and Locked-Down blocks can be individually unlocked by software command to the [110] state, where they can be erased and programmed. These blocks can then be relocked [111] and unlocked [110] as required while WP# remains high. When WP# goes low, blocks that were previously Locked Down return to the Lock-Down state [011], regardless of any changes made while WP# was high. Device reset or power-down resets all blocks, including those in Lock-Down, to Locked state.
11.2
Reading Block-Lock Status
The Lock status of each block can be read in read-identifier mode of the device by issuing the readidentifier command (0x90). Subsequent reads at Block Address + 0x00002 will output the Lock status of that block. The Lock status is represented by DQ0 and DQ1:
* DQ0 indicates the Block Lock/Unlock status and is set by the Lock command and cleared by
the Unlock command. It is also automatically set when entering Lock Down.
* DQ1 indicates Lock-Down status and is set by the Lock-Down command. It cannot be cleared
by software--only by device reset or power-down. See Table 21, "Device Identification Codes" on page 42 for block-status information.
May 2005 50
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
11.3
Locking Operations during Erase Suspend
Changes to block-lock status can be performed during an erase-suspend by using the standard locking command sequences to Unlock, Lock, or Lock Down a block. This operation is useful in the case when another block needs to be updated while an Erase operation is in progress. To change block locking during an Erase operation, first issue the Erase Suspend command (0xB0), and then check the Status Register until it indicates that the Erase operation has been suspended. Next, write the preferred Lock command sequence to a block and the Lock status will be changed. After completing any preferred Lock, Read, or Program operations, resume the Erase operation with the Erase Resume command (0xD0). If a block is Locked or Locked Down during a Suspended Erase of the same block, the locking status bits will be changed immediately. But when the Erase is resumed, the Erase operation will complete. Locking operations cannot be performed during a Program Suspend. Refer to Appendix A, "Write State Machine States" on page 54 for detailed information on which commands are valid during Erase Suspend.
11.4
Status Register Error Checking
Using nested-locking or program-command sequences during Erase Suspend can introduce ambiguity into Status Register results. Since locking changes are performed using a two-cycle command sequence, for example, 0x60 followed by 0x01 to lock a block. Following the Block Lock, Block Unlock, or Block Lock-Down Setup command (0x60) with an invalid command will produce a Lock-Command error (SR[4] and SR[5] will be set to 1) in the Status Register. If a Lock-Command error occurs during an Erase Suspend, SR[4] and SR[5] will be set to 1 and will remain at 1 after the Erase is resumed. When Erase is complete, any possible error during the Erase cannot be detected by the Status Register because of the previous Lock-Command error. A similar situation happens if an error occurs during a Program-Operation error nested within an Erase Suspend.
11.5
128-Bit Protection Register
The C3 device architecture includes a 128-bit protection register than can be used to increase the security of a system design. For example, the number contained in the protection register can be used to "match" the flash component with other system components, such as the CPU or ASIC, preventing device substitution. Application note, AP-657 Designing with the Advanced+ Boot Block Flash Memory Architecture, contains additional application information. The 128 bits of the protection register are divided into two 64-bit segments. One of the segments is programmed at the Intel factory with a unique 64-bit number, which is unchangeable. The other segment is left blank for customer designs to program, as preferred. Once the customer segment is programmed, it can be locked to prevent further programming.
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 51
Intel(R) Advanced+ Boot Block Flash Memory (C3)
11.5.1
Reading the Protection Register
The protection register is read in the Read-Identifier mode. The device is switched to this mode by issuing the Read Identifier command (0x90). Once in this mode, read cycles from addresses shown in Figure 15, "Protection Register Mapping" retrieve the specified information. To return to ReadArray mode, issue the Read Array command (0xFF).
11.5.2
Programming the Protection Register
The protection register bits are programmed using the two-cycle Protection Program command. The 64-bit number is programmed 16 bits at a time. First, issue the Protection Program Setup command, 0xC0. The next write to the device will latch in address and data and program the specified location. The allowable addresses are listed in Table 21, "Device Identification Codes" on page 42. See Figure 22, "Protection Register Programming Flowchart" on page 61. Attempting to program to a previously locked protection register segment will result in a Status Register error (Program Error bit SR[4] and Lock Error bit SR[1] will be set to 1).
Note:
Do not attempt to address Protection Program commands outside the defined protection register address space; status register can be indeterminate.
11.5.3
Locking the Protection Register
The user-programmable segment of the protection register is lockable by programming bit 1 of the PR-LOCK location to 0. See Figure 15, "Protection Register Mapping" on page 52. Bit 0 of this location is programmed to 0 at the Intel factory to protect the unique device number. This bit is set using the Protection Program command to program 0xFFFD to the PR-LOCK location. After these bits have been programmed, no further changes can be made to the values stored in the protection register. Protection Program commands to a locked section will result in a Status Register error (Program Error bit SR[4] and Lock Error bit SR[1] will be set to 1). Protection register lockout state is not reversible.
Figure 15.
Protection Register Mapping
0x88
64-bit Segment (User-Programmable)
0x85 0x84
128-Bit Protection Register 0
64-bit Segment (Intel Factory-Programmed)
0x81 PR Lock Register 0 0x80
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
11.6
VPP Program and Erase Voltages
The C3 device provides in-system programming and erase in the 1.65 V-3.6 V range. For fast production programming, 12 V programming can be used. See Figure 16, "Example Power Supply Configurations" on page 53.
May 2005 52
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
11.6.1
Program Protection
In addition to the flexible block locking, the VPP programming voltage can be held low for absolute hardware write protection of all blocks in the flash device. When VPP is below or equal to VPPLK, any Program or Erase operation will result in an error, prompting the corresponding Status Register bit (SR[3]) to be set.
Figure 16.
Example Power Supply Configurations
System Supply 12 V Supply 10 K 12 V Fast Programming Absolute Write Protection With V System Supply
(Note 1)
PP
System Supply
VCC VPP
Prot# (Logic Signal)
VCC VPP
Low-Voltage Programming VPPLK Absolute Write Protection via Logic Signal System Supply
VCC VPP
VCC VPP
Low-Voltage Programming
0645_06
12 V Supply Low Voltage and 12 V Fast Programming
Note: 1.A resistor can be used if the VCC supply can sink adequate current based on resistor value. See AP-657 Designing with the Advanced+ Boot Block Flash Memory Architecture for details.
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 53
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Appendix A Write State Machine States
Table 25 and Table 26 show the Write State Machine command state transitions based on incoming commands.
Table 25. Write State Machine States
Command Input (and Next State) Data When Read Array Status Config CFI Status Status Status Status Status Status Status Status Status Array Config CFI Status Status Status Status Status Array Config CFI Status Erase Sus. Read Array Erase Sus. Read Array Erase Sus. Read Array Erase Sus. Read Array Read Array Prog. Sus. Read Array Prog. Sus. Read Array Prog. Sus. Read Array Prog. Sus. Read Array Read Array Program (Not Done) Program Suspend Read Array Program Suspend Read Array Program Suspend Read Array Program Suspend Read Array Prog. Setup Ers. Setup Erase (Not Done) Prog. (Not Done) Prog. (Not Done) Prog. (Not Done) Prog. (Not Done) Read Array Prog. Setup Read Array (FFH) Read Array Read Array Read Array Read Array Program Setup (10/ 40H) Prog. Setup Prog. Setup Prog. Setup Prog. Setup Erase Setup (20H) Ers. Setup Ers. Setup Ers. Setup Ers. Setup Lock (Done) Ers. Setup Ers. Setup Erase Confirm (D0H) Prog/Ers Suspend (B0H) Read Array Read Array Read Array Read Array Lock Cmd. Error Read Array Read Array Protection Register Program Protection Register Program (Not Done) Ers. Setup Read Array Program Prog. Sus. Status Prog. Sus. Rd. Array Prog. Sus. Rd. Array Prog. Sus. Rd. Array Prog. Sus. Rd. Array Read Array Erase Cmd. Error Read Array Erase Sus. Status Erase Erase Erase Erase Ers. Sus. Rd. Array Ers. Sus. Rd. Array Ers. Sus. Rd. Array Ers. Sus. Rd. Array Read Array Erase Erase Erase Erase Erase (Not Done) Program (Not Done) Program (Not Done) Program (Not Done) Program (Not Done) Program (Not Done) Prog. Sus. Status Prog. Sus. Status Prog. Sus. Status Prog. Sus. Status Read Status Prog. Sus. Rd. Array Prog. Sus. Rd. Array Prog. Sus. Rd. Array Prog. Sus. Rd. Array Read Array Read Sts. Read Array Lock (Done) Prog/Ers Resume (D0) Read Status (70H) Read Sts. Read Sts. Read Sts. Read Sts. Clear Status (50H) Read Array Read Array Read Array Read Array
Current State Read Array Read Status Read Config. Read Query Lock Setup Lock Cmd. Error Lock Oper. (Done) Prot. Prog. Setup Prot. Prog. (Not Done) Prot. Prog. (Done) Prog. Setup Program (Not Done) Prog. Susp. Status Prog. Susp. Read Array Prog. Susp. Read Config Prog. Susp. Read Query Program (Done) Erase Setup Erase Cmd. Error Erase (Not Done) Ers. Susp. Status Erase Susp. Array Ers. Susp. Read Config Ers. Susp. Read Query Erase (Done)
SR.7 "1" "1" "1" "1" "1" "1" "1" "1" "0" "1" "1" "0" "1" "1" "1" "1" "1" "1" "1" "0" "1" "1" "1" "1" "1"
Lock Command Error Read Array Read Array Prog. Setup Prog. Setup
Lock Cmd. Error Read Sts. Read Sts. Read Array Read Array
Erase Command Error Read Array Prog. Setup Ers. Setup
Erase Command Error Read Status Erase (Not Done) Erase Sus. Status Erase Sus. Status Erase Sus. Status Erase Sus. Status Read Sts. Ers. Sus. Rd. Array Ers. Sus. Rd. Array Ers. Sus. Rd. Array Ers. Sus. Rd. Array Read Array Read Array
Erase (Not Done) Prog. Setup Prog. Setup Prog. Setup Prog. Setup Prog. Setup Ers. Sus. Rd. Array Ers. Sus. Rd. Array Ers. Sus. Rd. Array Ers. Sus. Rd. Array Ers. Setup
May 2005 54
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Table 26.
Write State Machine States, Continued
Command Input (and Next State) Read Config (90H) Read Config. Read Config. Read Config. Read Config. Read Query (98H) Read Query Read Query Read Query Read Query Lock Setup (60H) Prot. Prog. Setup (C0H) Prot. Prog. Setup Prot. Prog. Setup Prot. Prog. Setup Prot. Prog. Setup Lock Confirm (01H) Lock Down Confirm (2FH) Read Array Read Array Read Array Read Array Lock Operation (Done) Prot. Prog. Setup Prot. Prog. Setup Protection Register Program Protection Register Program (Not Done) Read Config. Read Query Lock Setup Prot. Prog. Setup Program Program (Not Done) Prog. Susp. Read Config. Prog. Susp. Read Config. Prog. Susp. Read Config. Prog. Susp. Read Config. Read Config. Prog. Susp. Read Query Prog. Susp. Read Query Prog. Susp. Read Query Prog. Susp. Read Query Read Query Lock Setup Program Suspend Read Array Program Suspend Read Array Program Suspend Read Array Program Suspend Read Array Prot. Prog. Setup Read Array Erase (Not Done) Read Array Program (Not Done) Program (Not Done) Program (Not Done) Program (Not Done) Read Array Read Array Read Array Unlock Confirm (D0H)
Current State
Read Array Read Status Read Config. Read Query Lock Setup Lock Cmd. Error Lock Oper. (Done) Prot. Prog. Setup Prot. Prog. (Not Done) Prot. Prog. (Done) Prog. Setup Program (Not Done) Prog. Susp. Status Prog. Susp. Read Array Prog. Susp. Read Config. Prog. Susp. Read Query. Program (Done) Erase Setup Erase Cmd. Error Erase (Not Done) Erase Susp. Status Erase Suspend Array Eras Sus. Read Config Eras Sus. Read Query Ers.(Done)
Lock Setup Lock Setup Lock Setup Lock Setup
Locking Command Error Read Config. Read Config. Read Query Read Query Lock Setup Lock Setup
Erase Command Error Read Config. Read Query Lock Setup Prot. Prog. Setup Erase (Not Done) Ers. Susp. Read Config. Ers. Susp. Read Config. Erase Suspend Read Config. Erase Suspend Read Config. Read Config. Erase Suspend Read Query Erase Suspend Read Query Erase Suspend Read Query Erase Suspend Read Query Read Query Lock Setup Lock Setup Lock Setup Lock Setup Lock Setup Erase Suspend Read Array Erase Suspend Read Array Erase Suspend Read Array Erase Suspend Read Array Prot. Prog. Setup Read Array
Erase (Not Done) Erase (Not Done) Erase (Not Done) Erase (Not Done)
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 55
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Appendix B Flow Charts
Figure 17. Word Program Flowchart
WORD PROGRAM PROCEDURE
Start Bus Operation Command Write
(Setup)
Comments
Write 0x40, Word Address Write Data, Word Address Read Status Register
Program Data = 0x40 Setup Addr = Location to program Data Data = Data to program Addr = Location to program Status register data: Toggle CE# or OE# to update Status Register Check SR[7] 1 = WSM Ready 0 = WSM Busy
Write
(Confirm)
Read Program Suspend Loop
No Yes
None
Idle
None
SR[7] =
1
0
Suspend?
Repeat for subsequent Word Program operations. Full Status Register check can be done after each program, or after a sequence of program operations. Write 0xFF after the last operation to set to the Read Array state.
Full Status Check (if desired) Program Complete
FULL STATUS CHECK PROCEDURE
Read Status Register Bus Command Operation Idle SR[3] =
0 1 1
Comments Check SR[3]: 1 = VP P Error Check SR[4]: 1 = Data Program Error Check SR[1]: 1 = Block locked; operation aborted
None
VP P Range Error Idle Program Error None
SR[4] =
0
Idle
None
SR[1] =
0
1
Device Protect Error
SR[3] MUST be cleared before the Write State Machine will allow further program attempts. If an error is detected, clear the Status Register before continuing operations - only the Clear Staus Register command clears the Status Register error bits.
Program Successful
May 2005 56
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Figure 18.
Program Suspend / Resume Flowchart
PROGRAM SUSPEND / RESUME PROCEDURE
Start Bus Operation Command Write
(Program Suspend)
Comments Data = 0x70 Addr = Any address
Write 0xB0 Any Address Write 0x70 Any Address Read Status Register
Read Status
Write
(Read Status)
Program Data = 0xB0 Suspend Addr = Any address Status register data Toggle CE# or OE# to update Status register Addr = Any address Check SR[7]: 1 = WSM ready 0 = WSM busy Check SR[2]: 1 = Program suspended 0 = Program completed Data = 0xFF Addr = Any address Read array data from block other than the one being programmed
Read
None
SR[7] =
1
0
Idle
None
SR[2] =
1
0
Program Completed
Idle
None
Write
(Read Array)
Read Array None
Write 0xFF
Read Read Array Data Write 0xFF
(Read Array)
Write
Program Data = 0xD0 Resume Addr = Any address
Done Reading
Yes
No
Read Array Data
Write 0xD0 Any Address Program Resumed
(Program Resume)
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 57
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Figure 19.
Erase Suspend / Resume Flowchart
ERASE SUSPEND / RESUME PROCEDURE
Start Bus Operation Command Write
(Erase Suspend)
Comments Data = 0x70 Addr = Any address Data = 0xB0 Addr = Any address Status Register data. Toggle CE# or OE# to update Status register; Addr = Any Address Check SR[7]: 1 = WSM ready 0 = WSM busy Check SR[6]: 1 = Erase suspended 0 = Erase completed
Write 0xB0, Any Address Write 0x70, Any Address Read Status Register
Read Status Erase Suspend
Write
(Read Status)
Read
None
Idle SR[7] =
1 0 0
None
Idle Erase Completed Write Read or Write Write
None
SR[6] =
1
Read Array Data = 0xFF or 0x40 or Program Addr = Any address None Read array or program data from/to block other than the one being erased
Write 0xFF
(Read Array)
Read Array Data
Program Data = 0xD0 Resume Addr = Any address
Done Reading
1 (Erase Resume)
0
Write 0xD0, Any Address Erase Resumed
Write 0xFF
(Read Array)
Read Array Data
May 2005 58
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Figure 20.
Block Erase Flowchart
BLOCK ERASE PROCEDURE
Start Bus Command Comments Operation Block Data = 0x20 Erase Write Addr = Block to be erased (BA) Setup Write Write 0xD0, (Erase Confirm) Block Address Read Read Status Register
No
Write 0x20, Block Address
(Block Erase)
Erase Confirm None
Data = 0xD0 Addr = Block to be erased (BA) Status Register data. Toggle CE# or OE# to update Status register data Check SR[7]: 1 = WSM ready 0 = WSM busy
Suspend Erase Loop Suspend Erase
Idle
None
SR[7] =
1
0
Yes
Repeat for subsequent block erasures. Full Status register check can be done after each block erase or after a sequence of block erasures. Write 0xFF after the last operation to enter read array mode.
Full Erase Status Check (if desired) Block Erase Complete
FULL ERASE STATUS CHECK PROCEDURE
Read Status Register
1
Bus Command Operation Idle None None None VP P Range Error Command Sequence Error Block Erase Error Block Locked Error
Comments Check SR[3]: 1 = VP P Range Error Check SR[4,5]: Both 1 = Command Sequence Error Check SR[5]: 1 = Block Erase Error
SR[3] =
0
Idle Idle
SR[4,5] =
0
1,1
SR[5] =
0
1
SR[1] =
0
1
Check SR[1]: 1 = Attempted erase of locked block; erase aborted. SR[1,3] must be cleared before the Write State Machine will allow further erase attempts. Idle None Only the Clear Status Register command clears SR[1, 3, 4, 5]. If an error is detected, clear the Status register before attempting an erase retry or other error recovery.
Block Erase Successful
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 59
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Figure 21.
Locking Operations Flowchart
LOCKING OPERATIONS PROCEDURE
Start Bus Operation Command
(Lock Setup)
Comments Data = 0x60 Addr = Any Address 0x01 (Block Lock) 0xD0 (Block Unlock) 0x2F (Lock-Down Block) Block to lock/unlock/lock-down
Write 0x60, Block Address Write either 0x01/0xD0/0x2F, Block Address
Write
Lock Setup
(Lock Confirm)
Write
Lock, Data = Unlock, or Lock-Down Confirm Addr =
Write 0x90
(Read Device ID)
Write Read Data = 0x90 (Optional) Device ID Addr = Any Address Read Block Lock Block Lock status data (Optional) Status Addr = Block address + offset 2 Idle (Optional)
O ptional
Read Block Lock Status
Locking Change?
Yes
No
None
Confirm locking change on D[1,0] .
Write
(Read Array)
Read Array
Data = 0xFF Addr = Any address
Write 0xFF Any Address Lock Change Complete
May 2005 60
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Figure 22.
Protection Register Programming Flowchart
PROTECTION REGISTER PROGRAMMING PROCEDURE
Start Bus Command Operation Write
(Program Setup)
Comments
Write 0xC0, PR Address
Program Data = 0xC0 PR Setup Addr = First Location to Program Protection Data = Data to Program Program Addr = Location to Program None Status Register Data. Toggle CE# or OE# to Update Status Register Data Check SR[7]: 1 = WSM Ready 0 = WSM Busy
Write Write PR Address & Data
(Confirm Data)
Read
Read Status Register
Idle
None
SR[7] =
1
0
Program Protection Register operation addresses must be within the Protection Register address space. Addresses outside this space will return an error. Repeat for subsequent programming operations.
Full Status Check (if desired) Program Complete
Full Status Register check can be done after each program, or after a sequence of program operations. Write 0xFF after the last operation to set Read Array state.
FULL STATUS CHECK PROCEDURE
Read Status Register Data Bus Command Operation Idle SR[3], SR[4] =
0 1
Comments Check SR[1], SR[3], SR[4]: 0,1,1 = VP P Range Error Check SR[1], SR[3], SR[4]: 0,0,1 = Programming Error Check SR[1], SR[3], SR[4]: 1,0,1 = Block locked; operation aborted
None
VP P Range Error Idle None
Idle SR[3], SR[4] =
1
None
Program Error SR[3] must be cleared before the Write State Machine will allow further program attempts. Only the Clear Staus Register command clears SR[1, 3, 4].
0 1
SR[3], SR[4] =
0
Register Locked; Program Aborted
If an error is detected, clear the Status register before attempting a program retry or other error recovery.
Program Successful
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 61
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Appendix C Common Flash Interface
This appendix defines the data structure or "database" returned by the Common Flash Interface (CFI) Query command. System software should parse this structure to gain critical information such as block size, density, x8/x16, and electrical specifications. Once this information has been obtained, the software detects which command sets to use to enable flash writes, block erases, and otherwise control the flash component. The Query is part of an overall specification for multiple command set and control interface descriptions called Common Flash Interface, or CFI.
C.1
Query Structure Output
The Query database allows system software to obtain information for controlling the flash device. This section describes the device's CFI-compliant interface that allows access to Query data. Query data are presented on the lowest-order data outputs (DQ0-DQ7) only. The numerical offset value is the address relative to the maximum bus width supported by the device. On this family of devices, the Query table device starting address is a 0x10, which is a word address for x16 devices. For a word-wide (x16) device, the first two Query-structure bytes, ASCII "Q" and "R," appear on the low byte at word addresses 0x10 and 0x11. This CFI-compliant device outputs 0x00 data on upper bytes. The device outputs ASCII "Q" in the low byte (DQ0-DQ7) and 0x00 in the high byte (DQ8-DQ15). At Query addresses containing two or more bytes of information, the least-significant data byte is presented at the lower address, and the most-significant data byte is presented at the higher address. For tables in this appendix, addresses and data are represented in hexadecimal notation, so the "h" suffix has been dropped. In addition, since the upper byte of word-wide devices is always "0x00," the leading "00" has been dropped from the table notation and only the lower byte value is shown. Any x16 device outputs can be assumed to have 0x00 on the upper byte in this mode.
Table 27.
Summary of Query Structure Output as a Function of Device and Mode
Device Hex Offset
00010: Device Addresses 00011: 00012:
Hex Code
51 52 59
ASCII Value
"Q" "R" "Y"
May 2005 62
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Table 28.
Example of Query Structure Output of x16 Devices
Word Addressing: Offset A[X-0]
0x00010 0x00011 0x00012 0x00013 0x00014 0x00015 0x00016 0x00017 0x00018 ... 0051 0052 0059 P_IDLO P_IDHI PLO PHI A_IDLO A_IDHI ...
Hex Code DQ[16:0]
Value
"Q" "R" "Y" PrVendor ID # PrVendor TblAdr AltVendor ID # ...
C.2
Query Structure Overview
The Query command causes the flash component to display the Common Flash Interface (CFI) Query structure or "database." Table 29 summarizes the structure sub-sections and address locations.
Table 29.
Query Structure
Offset
0x00000 0x00001 0x(BA+2)
2
Sub-Section Name
Manufacturer Code Device Code Block Status register Reserved CFI query identification string System interface information Device geometry definition Primary Intel-specific Extended Query Table
Description1
Block-specific information Reserved for vendor-specific information Command set ID and vendor data offset Device timing & voltage information Flash device layout Vendor-defined additional information specific to the Primary Vendor Algorithm
0x00004-0xF 0x00010 0x0001B 0x00027 P3
Notes: 1. Refer to the Query Structure Output section and offset 0x28 for the detailed definition of offset address as a function of device bus width and mode. 2. BA = Block Address beginning location (i.e., 0x08000 is block 1's beginning location when the block size is 32K-word). 3. Offset 15 defines "P" which points to the Primary Intel-specific Extended Query Table.
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 63
Intel(R) Advanced+ Boot Block Flash Memory (C3)
C.3
Block Status Register
The Block Status Register indicates whether an erase operation completed successfully or whether a given block is locked or can be accessed for flash program/erase operations. See Table 30. Block Erase Status (BSR[1]) allows system software to determine the success of the last block erase operation. BSR[1] can be used just after power-up to verify that the VCC supply was not accidentally removed during an erase operation.
Table 30.
Block Status Register
Offset Length Description
Block Lock Status Register BSR[0] Block lock status 0 = Unlocked 1 = Locked BSR[1] Block lock-down status 0 = Not locked down 1 = Locked down BSR[7:2]: Reserved for future use
Add.
BA+2 BA+2
Value
--00 or --01 (bit 0): 0 or 1
0x(BA+2)1
1
BA+2 BA+2
(bit 1): 0 or 1 (bit 2-7): 0
Notes: 1. BA = Block Address beginning location (i.e., 0x08000 is block 1's beginning location when the block size is 32K-word).
May 2005 64
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
C.4
CFI Query Identification String
The Identification String provides verification that the component supports the Common Flash Interface specification. It also indicates the specification version and supported vendor-specified command set(s). See Table 31.
Table 31.
Offset
0x10
CFI Identification
Length
3
Description
Query-unique ASCII string "QRY" Primary vendor command set and control interface ID code 16-bit ID code for vendor-specified algorithms Extended Query Table primary algorithm address Alternate vendor command set and control interface ID code 0x0000 means no second vendor-specified algorithm exists Secondary algorithm Extended Query Table address 0x0000 means none exists
Add.
10: 11: 12: 13: 14: 15: 16: 17: 18: 19: 1A:
Hex Code
--51 --52 --59 --03 --00 --35 --00 --00 --00 --00 --00
Value
"Q" "R" "Y"
0x13 0x15 0x17 0x19
2 2 2 2
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 65
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Table 32.
Offset
0x1B
System Interface Information
Length
1
Description
VCC logic supply minimum program/erase voltage bits 0-3 BCD 100 mV bits 4-7 BCD volts VCC logic supply maximum program/erase voltage bits 0-3 BCD 100 mV bits 4-7 BCD volts VPP [programming] supply minimum program/erase voltage bits 0-3 BCD 100 mV bits 4-7 HEX volts VPP [programming] supply maximum program/erase voltage bits 0-3 BCD 100 mV bits 4-7 HEX volts "n" such that typical single word program time-out =2n s "n" such that typical max. buffer write time-out = 2 s "n" such that typical block erase time-out = 2 ms "n" such that typical full chip erase time-out = 2n ms "n" such that maximum word program time-out = 2n times typical "n" such that maximum buffer write time-out = 2 times typical "n" such that maximum block erase time-out = 2 times typical "n" such that maximum chip erase time-out = 2n times typical
n n n n
Add.
1B:
Hex Code
--27
Value
2.7 V
0x1C
1
1C:
--36
3.6 V
0x1D
1
1D:
--B4
11.4 V
0x1E 0x1F 0x20 0x21 0x22 0x23 0x24 0x25 0x26
1 1 1 1 1 1 1 1 1
1E: 1F: 20: 21: 22: 23: 24: 25: 26:
--C6 --05 --00 --0A --00 --04 --00 --03 --00
12.6 V 32 s NA 1s NA 512s NA 8s NA
C.5
Table 33.
Offset
Device Geometry Definition
Device Geometry Definition
Length Description
"n" such that device size = 2n in number of bytes x8 async 28:00,29:00 x16 async 28:01,29:00 x8/x16 async 28:02,29:00
Add.
Hex Code
Value
0x27
1
27 28: 29: 2A: 2B:
See Table 34, "Device Geometry Details" on page 67 --01 --00 --00 --00 x16 0
0x28 0x2A
2 2
Flash device interface:
"n" such that maximum number of bytes in write buffer = 2n Number of erase block regions within device: 1. x = 0 means no erase blocking; the device erases in "bulk" 2. x specifies the number of device or partition regions with one or more contiguous same-size erase blocks. 3. Symmetrically blocked partitions have one blocking region 4. Partition size = (total blocks) x (individual block size) Erase Block Region 1 Information bits 0-15 = y, y+1 = number of identical-size erase blocks bits 16-31 = z, region erase block(s) size are z x 256 bytes Erase Block Region 2 Information bits 0-15 = y, y+1 = number of identical-size erase blocks bits 16-31 = z, region erase block(s) size are z x 256 bytes
0x2C
1
2C:
--02
2
0x2D
4
2D: 2E: 2F: 30: 31: 32: 33: 34:
See Table 34, "Device Geometry Details" on page 67
0x2D
14
See Table 34, "Device Geometry Details" on page 67
May 2005 66
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Table 34.
Device Geometry Details
16 Mbit Address -B
0x27 0x28 0x29 0x2A 0x2B 0x2C 0x2D 0x2E 0x2F 0x30 0x31 0x32 0x33 0x34 --15 --01 --00 --00 --00 --02 --07 --00 --20 --00 --1E --00 --00 --01
32 Mbit -T
-15 --01 --00 --00 --00 --02 --1E --00 --00 --01 --07 --00 --20 --00
64 Mbit -T
-16
-B
--16 --01 --00 --00 --00 --02 --07 --00 --20 --00 --3E --00 --00 --01
-B
--17 --01 -00 -00 -00 --02 --07 -00 --20 --00 --7E -00 --00 --01
-T
--17 --01 -00 -00 -00 --02 --7E -00 --00 --01 --07 -00 --20 --00
--01 -00 -00 -00 --02 --3E -00 -00 --01 --07 -00 --20 --00
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 67
Intel(R) Advanced+ Boot Block Flash Memory (C3)
C.6
Intel-Specific Extended Query Table
Certain flash features and commands are optional as shown in Table 35, "Primary-Vendor Specific Extended Query" on page 68. The Intel-specific Extended Query table specifies these features as well as other similar types of information.
Table 35.
Offset1 P = 0x15
0x(P+0) 0x(P+1) 0x(P+2) 0x(P+3) 0x(P+4)
Primary-Vendor Specific Extended Query
Length Description (Optional Flash Features and Commands)
Primary extended query table Unique ASCII string "PRI" Major version number, ASCII Minor version number, ASCII Optional feature and command support (1=yes, 0=no) bits 9-31 are reserved; undefined bits are "0." If bit 31 is "1" then another 31 bit field of optional features follows at the end of the bit-30 field.
Address
35: 36: 37: 38: 39: 3A: 3B: 3C: 3D: bit 0 bit 1 bit 2 bit 3 bit 4 bit 5 bit 6 bit 7 bit 8
Hex Code
--50 --52 --49 --31 --30 --66 --00 --00 --00 =0 =1 =1 =0 =0 =1 =1 =0 =0
Value
"P" "R" "I" "1" "0"
3 1 1
0x(P+5) 0x(P+6) 0x(P+7) 0x(P+8)
4
bit 0 Chip erase supported bit 1 Suspend erase supported bit 2 Suspend program supported bit 3 Legacy lock/unlock supported bit 4 Queued erase supported bit 5 Instant individual block locking supported bit 6 Protection bits supported bit 7 Page mode read supported bit 8 Synchronous read supported Supported functions after suspend: Read Array, Status, Query Other supported operations are: bits 1-7 reserved; undefined bits are "0" bit 0 Program supported after erase suspend 3F: Block Status Register mask bits 2-15 are Reserved; undefined bits are "0" bit 0 Block Lock-Bit Status Register active bit 1 Block Lock-Down Bit Status active VCC logic supply highest performance program/ erase voltage bits 0-3 BCD value in 100 mV bits 4-7 BCD value in volts VPP optimum program/erase supply voltage bits 0-3 BCD value in 100 mV bits 4-7 HEX value in volts
No Yes Yes No No Yes Yes No No
0x(P+9)
1
3E:
--01
bit 0 = 1 --03 --00 bit 0 = 1 bit 1 = 1
Yes
0x(P+A) 0x(P+B)
2
40:
Yes Yes
0x(P+C)
1
41:
--33
3.3 V
0x(P+D)
1
42:
--C0
12.0 V
Notes: 1. The variable P is a pointer which is defined at CFI offset 0x15.
May 2005 68
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Table 36.
Offset1 P = 0x35
0x(P+E) 0x(P+F) 0x(P+10) (0xP+11)
Protection Register Information
Length
1
Description (Optional Flash Features and Commands)
Number of Protection register fields in JEDEC ID space. "00h," indicates that 256 protection bytes are available
Address
43: 44: 45: 46:
Hex Code
--01 --80 --00 --03
Value
01 80h 00h 8 byte
4 0x(P+12)
Protection Field 1: Protection Description This field describes user-available One Time Programmable (OTP) Protection register bytes. Some are pre-programmed with deviceunique serial numbers. Others are user programmable. Bits 0-15 point to the Protection register Lock byte, the section's first byte. The following bytes are factory pre-programmed and userprogrammable. bits 0-7 = Lock/bytes JEDEC-plane physical low address bits 8-15 = Lock/bytes JEDEC -plane physical high address bits 16-23 = "n" such that 2n = factory pre-programmed bytes bits 24-31 = "n" such that 2n = user programmable bytes Reserved for future use
47:
--03
8 byte
0x(P+13)
48:
Notes: 1. The variable P is a pointer which is defined at CFI offset 0x15.
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 69
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Appendix D Additional Information
Order Number
297938 292216 292215 Contact your Intel Representative 297874
Document/Tool
3 Volt Advanced+ Boot Block Flash Memory Specification Update AP-658 Designing for Upgrade to the Advanced+ Boot Block Flash Memory AP-657 Designing with the Advanced+ Boot Block Flash Memory Architecture Intel(R) Flash Data Integrator (Intel(R) FDI) Software Developer's Kit IFDI Interactive: Play with Intel(R) Flash Data Integrator on Your PC
Notes: 1.Call the Intel Literature Center at (800) 548-4725 to request Intel documentation. International customers should contact their local Intel or distribution sales office. 2.See the Intel page at `http://www.intel.com/design/flash' for technical documentation and tools.
May 2005 70
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Appendix E Ordering Information
Figure 23. Component Ordering Information
T E2 8 F 3 2 0 C3 T C7 0
Package TE = 48- Lead TSOP GT = 48- Ball BGA * CSP GE = VF BGA CSP RC = Easy BGA PC = Pb Free Easy BGA PH = Pb Free VFBGA JS = Pb Free TSOP Product line designator (R) for all Intel Flash products Device Density 640 = x16 (64 Mbit) 320 = x16 (32 Mbit) 160 = x16 (16 Mbit) 800 = x16 (8 Mbit) Access Speed (ns) (70, 80 , 90, 100 , 110 ) Lithography A = 0.25 m C = 0.18 m D = 0.13 m T = Top Blocking B = Bottom Blocking Product Family C3 = 3 Volt Advanced+ Boot Block VCC = 2.7 V-3.6 V VPP = 2 .7 V-3 .6 V or 11 V-12 .6 V .4
Datasheet
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
May 2005 71
Intel(R) Advanced+ Boot Block Flash Memory (C3)
Table 37.
Product Information Ordering Matrix
VALID COMBINATIONS (All Extended Temperature)
48-Lead TSOP
Extended 64 Mbit TE28F320C3TD70 TE28F320C3BD70 TE28F320C3TC70 TE28F320C3BC70 TE28F320C3TC90 TE28F320C3BC90 TE28F320C3TA100 TE28F320C3BA100 TE28F320C3TA110 TE28F320C3BA110 JS28F320C3BD70 JS28F320C3TD70 JS28F320C3BD90 JS28F320C3TD90 TE28F160C3TD70 TE28F160C3BD70 TE28F160C3TC70 TE28F160C3BC70 TE28F160C3TC80 TE28F160C3BC80 TE28F160C3TC90 TE28F160C3BC90 TE28F160C3TA90 TE28F160C3BA90 TE28F160C3TA110 TE28F160C3BA110 JS28F160C3BD70 JS28F160C3TD70 TE28F800C3TD70 TE28F800C3BD70 TE28F800C3TA90 TE28F800C3BA90 TE28F800C3TA110 TE28F800C3BA110 JS28F800C3BD70 JS28F800C3TD70
48-Ball BGA* CSP
48-Ball VF BGA
Easy BGA
Extended 32 Mbit
GT28F320C3TA100 GT28F320C3BA100 GT28F320C3TA110 GT28F320C3BA110
GE28F320C3TD70 GE28F320C3BD70 GE28F320C3TC70 GE28F320C3BC70 GE28F320C3TC90 GE28F320C3BC90 PH28F320C3BD70 PH28F320C3TD70 PH28F320C3BD90 PH28F320C3TD90
RC28F320C3TD70 RC28F320C3BD70 RC28F320C3TD90 RC28F320C3BD90 RC28F320C3TC90 RC28F320C3BC90 RC28F320C3TA100 RC28F320C3BA100 RC28F320C3TA110 RC28F320C3BA110 PC28F320C3BD70 PC28F320C3TD70 PC28F320C3BD90 PC28F320C3TD90 RC28F160C3TD70 RC28F160C3BD70 RC28F160C3TC70 RC28F160C3BC70 RC28F160C3TC80 RC28F160C3BC80 RC28F160C3TC90 RC28F160C3BC90 RC28F160C3TA90 RC28F160C3BA90 RC28F160C3TA110 RC28F160C3BA110 PC28F160C3BD70 PC28F160C3TD70 RC28F800C3TD70 RC28F800C3BD70 RC28F800C3TA90 RC28F800C3BA90 RC28F800C3TA110 RC28F800C3BA110 PC28F800C3BD70 PC28F800C3TD70
Extended 16 Mbit
GT28F160C3TA90 GT28F160C3BA90 GT28F160C3TA110 GT28F160C3BA110
GE28F160C3TD70 GE28F160C3BD70 GE28F160C3TC70 GE28F160C3BC70 GE28F160C3TC80 GE28F160C3BC80 GE28F160C3TC90 GE28F160C3BC90 PH28F160C3BD70 PH28F160C3TD70
Extended 8 Mbit
Note:
The second line of the 48-ball BGA package top side mark specifies assembly codes. For samples only, the first character signifies either "E" for engineering samples or "S" for silicon daisy chain samples. All other assembly codes without an "E" or "S" as the first character are production units.
May 2005 72
Intel(R) Advanced+ Boot Block Flash Memory (C3) Order Number: 290645, Revision: 023
Datasheet

▲Up To Search▲

Price & Availability of RC28F320C3

	To Download RC28F320C3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .